Improved electrical characteristics and reliability of MILC Poly-Si TFTs using fluorine-ion implantation

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 990-992

  Chang, Chih Pang ^a   Wu, Yew Chung Sermon ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

Fluorine ion implantation; Metal induced lateral crystallization (MILC); Polycrystalline silicon thin film transistors (poly Si TFTs)

Indexed keywords

CRYSTALLIZATION; ELECTRON ENERGY LEVELS; ELECTRON TRAPS; FLUORINE; ION IMPLANTATION; POLYSILICON; THRESHOLD VOLTAGE;

FIELD-EFFECT MOBILITY; METAL-INDUCED LATERAL-CRYSTALLIZATION; SUBTHRESHOLD SLOPE;

THIN FILM TRANSISTORS;

EID: 36148978625     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.906803     Document Type: Article

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