Improvement of electrical characteristics for fluorine-ion-implanted poly-Si TFTs using ELC

IEEE Electron Device Letters

Volumn 27, Issue 4, 2006, Pages 262-264

  Tu, Chun Hao ^a   Chang, Ting Chang ^b,c   Liu, Po Tsun ^a   Yang, Che Yu ^a   Liu, Hsin Chou ^a   Chen, Wei Ren ^a   Wu, Yung Chun ^a   Chang, C Y Chun Ye ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

Fluorine ion implantation; Polycrystalline silicon thin film transistors (poly Si TFTs)

Indexed keywords

ANNEALING; DEPOSITION; EXCIMER LASERS; FLUORINE; ION IMPLANTATION; POLYSILICON;

ELECTRICAL CHARACTERISTICS; FLUORINE ION IMPLANTATION; GATE OXIDE; TRAP STATE DENSITY;

THIN FILM TRANSISTORS;

EID: 33645643411     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.870420     Document Type: Article

References (12)

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