Blistering effects of low energy hydrogen and helium ions implanted in GaAs(100) crystals

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 242, Issue 1-2, 2006, Pages 620-622

  Giguere A ^a   Desrosiers, N ^a   Terreault, B ^a  

^a INRS EMT   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPUTER SIMULATION; CRYSTALS; HELIUM; HYDROGEN; IONS; PROBABILITY;

ANNEALING TEMPERATURE; BLISTERING EFFECTS; BLISTERS; FLUENCES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 28544447484     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2005.08.187     Document Type: Conference Paper

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