Annealing behavior of implanted helium in indium phosphide

Applied Physics Letters

Volumn 78, Issue 2, 2001, Pages 207-209

  Simpson, Todd W ^a   Mitchell, Ian V ^a  

^a UNIVERSITY OF WESTERN ONTARIO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001108856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1337643     Document Type: Article

References (8)

1. M. Kaminsky, IEEE Trans. Nucl. Sci. NS-18, 208 (1971).
2. S. K. Das and M. Kaminsky, J. Appl. Phys. 44, 25 (1973).
3. E. Ligeon and A. Guivarc'h, Radiat. Eff. 27, 129 (1976).
4. M. Bruel, Electron. Lett. 31, 1201 (1995).
5. T. W. Simpson, I. V. Mitchell, G. O. Este, and F. R. Shepherd, Nucl. Instrum. Methods Phys. Res. B 148, 381 (1999).
6. T. W. Simpson and I. V. Mitchell (unpublished).
7. J. P. Biersack and L. G. Haggmark, Nuc. Instrum. Methods 174, 257 (1980).
8. W. Moller and F. Besenbacher, Nucl. Instrum. Methods 168, 111 (1980).