Dependence of sheet resistance of CoSi2 with gate length of 30 nm on thickness of titanium nitride capping layer in co-salicide process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 11, 2007, Pages 7268-7272

  Kawamura, Kazuo ^a   Inagaki, Satoshi ^a   Saiki, Takashi ^a   Nakamura, Ryo ^a   Kataoka, Yuji ^a   Kase, Masataka ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

Cobalt disilicide; Cobalt monosilicide; Gate length; Rapid thermal annealing; Sheet resistance; Titanium nitride

Indexed keywords

INTERFACES (MATERIALS); RAPID THERMAL ANNEALING; SHEET RESISTANCE; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; TITANIUM NITRIDE;

COBALT CAPPING LAYER; COBALT DISILICIDE; COBALT MONOSILICIDE; GATE LENGTH; GATE RESISTANCE;

COBALT COMPOUNDS;

EID: 35949003619     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.7268     Document Type: Article

References (19)

1. J. P. Lu, D. Miles, J. Zhao, A. Gurba, Y. Xu, C. Lin, M. Hewson, J. Ruan, L. Tsung, R. Kuan, T. Grider, D. Mercer, and C. Montgomery: IEDM Tech. Dig., 2002, p. 371.
2. P. R. Besser, S. Chan, E. Paton, T. Kammler, D. Brown, P. King, and L. Pressley: Mater. Res. Soc. Symp. Proc. 766 (2003) E10.1.1.
3. J. A. Kittl, A. Lauwers, O. Chamirian, M. Van Dal, A. Akheyar, M., de Potter, R. Lindsay, and K. Maex: Mater. Res. Soc. Symp. Proc. 810 (2004) C2.1.1.
4. J. P. Lug, D. S. Miles, J. DeLoach, D. F. Yue, P. J. Chen, T. Bonifield, S. Crank, S. F. Yu, F. Mehrad, Y. Obeng, D. A. Ramppa, D. Corum, R. L. Guldi, L. S. Robertson, X. Liu, L. H. Hall, Y. Q. Xu, B. Y. Lin, A. J. Griffin, Jr., F. S. Johnson, T. Grider, D. Mercer, and C. Montgomery: 6th Int. Workshop Junction Technology, 2006, p. 127.
5. S.-Y. Lee, W. Cao, E. Lee, P. Lo, and S. K. Lee: Thin Solid Films 405 (2002) 73.
6. W.-G. Lee: J. Electrochem. Soc. 151 (2004) G98.
7. J. Zhao, C. M. Jones, and D. M. Poirier: J. Vac. Sci. Technol. B 17 (1999) 2570.
8. C. Ghica, L. Nistor, H. Bender, A. Steegen, A. Lauwers, K. Maex, and J. Van Landuyt: J. Mater. Res. 16 (2001) 701.
9. C.-Y. Kang, D.-G. Kang, and J.-W. Lee: J. Appl. Phys. 86 (1999) 5293.
10. C. Detavernier, R. L. Van Meirhaeghe, F. Cardon, R. A. Donaton, and K. Maex: Appl. Phys. Lett. 74 (1999) 2930.
11. A. Appelbaum, R. V. Knoell, and S. P. Murarka: J. Appl. Phys. 57 (1985) 1880.
12. K. Goto, I. Fushida, J. Watanabe, T. Sukegawa, K. Kawamura, T. Yamazaki, and T. Sugii: IEDM Tech. Dig., 1995, p. 449.
13. K. Kawamura, T. Saiki, and R. Nakamura: Jpn. J. Appl. Phys. 45 (2006) 5293.
14. N. Schell, W. Marz, J. Bottiger, J. Chevallier, and P. Kringhoj: J. Appl. Phys. 91 (2002) 2037.
15. T. Q. Li, S. Noda, Y. Tsuji, T. Ohsawa, and H. Komiyama: J. Vac. Sci. Technol. A 20 (2002) 583.
16. D. K. Sohn, J.-S. Park, B.-H. Lee, J.-U. Bae, J. S. Byun, and J. J. Kim: Appl. Phys. Lett. 73 (1998) 2302.
17. C. Detavernier, R. L. Van Meirhaeghe, F. Cardon, R. A. Donaton, and K. Maex: Appl. Phys. Lett. 74 (1999) 2930.
18. R. T. Tung and F. Schrey: Appl. Phys. Lett. 67 (1995) 2164.
19. Y.-M. Chen, G. C. Tu, and Y.-L. Wang: Thin Solid Films 498 (2006) 282.