Silicides for the 65 nm technology node

Materials Research Society Symposium - Proceedings

Volumn 766, Issue , 2003, Pages 59-69

  Besser, Paul R ^a   Chan, Simon ^a   Paton, Eric ^a   Kammler, Thorsten ^b   Brown, David ^a   King, Paul ^a   Pressley, Laura ^a  

^a ADVANCED MICRO DEVICES   (United States)

^b IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; ANNEALING; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; NICKEL COMPOUNDS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING GERMANIUM; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

COBALT SILICIDE; GERMANOSILICIDE FORMATION; SHALLOW JUNCTION; TITANIUM SILICIDE; ULTRA THIN SILICON;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0346394485     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-766-e10.1     Document Type: Conference Paper

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