The Effects of Residual RTOs on Formation of CoSi2 and Its Properties for 0.18 μm CMOS

Journal of the Electrochemical Society

Volumn 151, Issue 2, 2004, Pages

  Lee, Wan Gyu ^a  

^a Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CRYSTAL STRUCTURE; DEPOSITION; ELECTRIC RESISTANCE; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR DOPING; SILICON;

RAPID THERMAL OXIDE (RTO); SHEET RESISTANCE;

COBALT COMPOUNDS;

EID: 1242332457     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1639170     Document Type: Article

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