Growth and characterization of multi-layer 1.3 μm quantum dot lasers

International Journal of Nanoscience

Volumn 6, Issue 3-4, 2007, Pages 291-296

  Mowbray, David ^a   Badcock, Tom ^a   Sellers, Ian ^a   Ramsay, Andrew ^a   Skolnick, Maurice ^a   Hui Yun, Liu ^a   Hopkinson, Mark ^a   Groom, Kristian ^a   Hogg, Richard ^a   Beanland, Richard ^b   Childs, David ^b   Robbins, David ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

Modulation doping; Quantum dot lasers; Quantum dots; Self assembled

Indexed keywords

DOPING (ADDITIVES); INDIUM ARSENIDE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; THERMODYNAMIC STABILITY; THRESHOLD CURRENT DENSITY;

FACET DEVICES; MODULATION DOPING; QUANTUM DOT LASERS; TEMPERATURE SENSITIVITY;

SEMICONDUCTOR LASERS;

EID: 35948999244     PISSN: 0219581X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0219581x07004791     Document Type: Article

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