Single-electron charging in nanocrystalline silicon point-contacts

Microelectronic Engineering

Volumn 63, Issue 1-3, 2002, Pages 267-275

  Durrani, Z A K ^a   Kamiya, T ^a   Tan, Y T ^a   Ahmed, H ^a   Lloyd, N ^b  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

Author keywords

Chemical vapour deposition; Nanocrystalline silicon; Point contact; Polycrystalline silicon; Single electron

Indexed keywords

ANNEALING; ELECTRON TUNNELING; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NANOSTRUCTURED MATERIALS; OXIDATION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POLYSILICON; SEMICONDUCTING SILICON; THIN FILM TRANSISTORS;

SINGLE ELECTRON CHARGING;

POINT CONTACTS;

EID: 0036679865     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(02)00602-0     Document Type: Conference Paper

References (14)

1. Single charge tunneling-coulomb blockade phenomena in nanostructures