Hydrogen-induced restructuring and crater formation at Si(111) surfaces: A scanning tunneling microscopy study

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 2033-2034

  Naitoh, Masamichi ^a   Shimaya, Hiroshi ^a   Watanabe, Akihiko ^a   Nishigaki, Satoshi ^a  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Hydrogen adsorption; Si(111); STM; Surface reconstruction; Surface structure

Indexed keywords

ANNEALING; COALESCENCE; GAS ABSORPTION; HIGH TEMPERATURE EFFECTS; HYDROGEN; SCANNING ELECTRON MICROSCOPY; STACKING FAULTS; SURFACE STRUCTURE;

SURFACE RECONSTRUCTION;

SILICON WAFERS;

EID: 0032045494     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.2033     Document Type: Article

References (10)

1. J. J. Boland: Surf. Sci. 244 (1991) 1.
2. F. Owman and P. Mårtensson: Surf. Sci. 324 (1995) 211.
3. Y. Morita, K. Miki and H. Tokumoto: Surf. Sci. 325 (1995) 21.
4. Y. Morita, K. Miki and H. Tokumoto: Surf. Sci. 298 (1993) L163.
5. Y. Tanaka, K. Ishiyama and A. Ichimiya: Surf. Sci. 357-358 (1996) 840.
6. K. Oura, M. Naitoh, F. Shoji, J. Yamane, K. Umezawa and T. Hanawa: Nucl. Instrum. & Methods B 45 (1990) 199.
7. K. Takayanagi, Y. Tanishiro, M. Takahashi and S. Takahashi: J. Vac. Sci. & Technol. A 3 (1985) 1502.
8. M. Naitoh, A. Watanabe and S. Nishigaki: Surf. Sci. 357-358 (1996) 140.
9. S. M. Gates, R. R. Kunz and C. M. Greenlief: Surf. Sci. 207 (1989) 364.
10. C. M. Greenlief, S. M. Gates and P. A. Holbert: Chem. Phys. Lett. 159 (1989) 202.