An experimental study of the thermally activated processes in polycrystalline silicon thin film transistors

Microelectronics Reliability

Volumn 47, Issue 12, 2007, Pages 2058-2064

  Michalas, L ^a   Exarchos, M ^a   Papaioannou, G J ^a   Kouvatsos, D N ^b   Voutsas, A T ^c  

^a UNIVERSITY OF ATHENS   (Greece)

^b INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLIZATION; EXCIMER LASERS; GRAIN SIZE AND SHAPE; POLYSILICON; THERMAL EFFECTS;

LASER ANNEALING CRYSTALLIZATION; TEMPERATURE DEPENDENCE;

THIN FILM TRANSISTORS;

EID: 35648963614     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.11.016     Document Type: Article

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