Effect of hot carrier stress on the performance, trap densities and transient behavior of SLS ELA TFTs

Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

Volumn 2005, Issue , 2005, Pages 395-398

  Kouvatsos, D N ^a   Papaioannou, G J ^b   Exarchos, M ^b   Michalas, L ^b   Voutsas, A T ^c  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b UNIVERSITY OF ATHENS   (Greece)

^c SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CURRENTS; ELECTRON TRAPS; PARAMETER ESTIMATION; POLYSILICON; THIN FILM TRANSISTORS; TRANSIENTS; ULTRATHIN FILMS;

CARRIER GENERATION; GRAIN BOUNDARY TRAP DENSITY; POLYSILICON FILMS; TRANSIENT DRAIN CURRENT;

HOT CARRIERS;

EID: 33751440305     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDER.2005.1546668     Document Type: Conference Paper

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