Temperature dependence on electrical characteristics of short geometry poly-crystalline silicon thin film transistor

Solid-State Electronics

Volumn 49, Issue 3, 2005, Pages 301-309

  Sehgal, Amit ^a   Mangla, Tina ^a   Gupta, Mridula ^a   Gupta, R S ^a  

^a UNIVERSITY OF DELHI   (India)

Author keywords

Analytical modeling; Cut off frequency; Drain current; Fringing capacitance; Inverse narrow width effect; Poly crystalline silicon; Short channel effects; Temperature; TFT; Threshold voltage; Transconductance; Transit time

Indexed keywords

CAPACITANCE; ELECTRIC CURRENTS; FREQUENCIES; POLYCRYSTALLINE MATERIALS; SILICON; TEMPERATURE; THRESHOLD VOLTAGE; TRANSCONDUCTANCE;

ANALYTICAL MODELING; CUT-OFF FREQUENCIES; DRAIN CURRENT; FRINGING CAPACITANCE; INVERSE NARROW WIDTH EFFECTS; POLY-CRYSTALLINE SILICON; SHORT CHANNEL EFFECTS; TFT; TRANSIT TIME;

THIN FILM TRANSISTORS;

EID: 12344270385     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.11.009     Document Type: Article

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