Effects of aging on the 1f noise of metal-oxide-semiconductor field effect transistors

Applied Physics Letters

Volumn 91, Issue 17, 2007, Pages

  Zhou, X J ^a   Fleetwood, D M ^a   Danciu, I ^a   Dasgupta, A ^a   Francis, S A ^a   Touboul, A D ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b UNIVERSITÉ MONTPELLIER II   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; FIELD EFFECT TRANSISTORS; OXIDATION; SILICON COMPOUNDS; THRESHOLD VOLTAGE; VACANCIES;

NOISE MAGNITUDES; POSITIVE THRESHOLD VOLTAGE SHIFTS; POST GATE OXIDATION; ROOM TEMPERATURE AGING;

MOS DEVICES;

EID: 35549008016     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2800380     Document Type: Article

References (20)

1. M. P. Rodgers, D. M. Fleetwood, R. D. Schrimpf, I. G. Batyrev, S. Wang, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 52, 2642 (2005).
2. D. M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, R. D. Schrimpf, and S. T. Pantelides, Microelectron. Reliab. 47, 1075 (2007).
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys. 89, 5243 (2001).
4. J. Robertson, J. Vac. Sci. Technol. B 18, 1785 (2000).
5. S. E. Thompson, M. Armstrong, C. Auth, S. Cea, R. Chau, G. Glass, T. Hoffman, J. Klaus, M. Zhiyong, B. McIntyre, A. Murthy, B. Obradovic, L. Shifren, S. Sivakumar, S. Tyagi, T. Ghani, K. Mistry, M. Bohr, and Y. El-Mansy, IEEE Electron Device Lett. 25, 191 (2004).
6. A. Stesmans, D. Pierreux, R. J. Jaccodine, M.-T. Lin, and T. J. Delph, Appl. Phys. Lett. 82, 3038 (2003).
7. A. Stesmans, P. Somers, V. V. Afanas'ev, C. Claeys, and E. Simoen, Appl. Phys. Lett. 89, 152103 (2006).
8. D. M. Fleetwood and J. H. Scofield, Phys. Rev. Lett. 64, 579 (1990).
9. J. H. Scofield, T. P. Doerr, and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 36, 1946 (1989).
10. J. H. Scofield and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 38, 1567 (1991).
11. D. M. Fleetwood, H. D. Xiong, Z. Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, IEEE Trans. Nucl. Sci. 49, 2674 (2002).
12. D. M. Fleetwood, P. S. Winokur, R. A. Reber, Jr., T. L. Meisenheimer, J. R. Schwank, M. R. Shaneyfelt, and L. C. Riewe, J. Appl. Phys. 73, 5058 (1993).
13. P. Dutta and P. M. Horn, Rev. Mod. Phys. 53, 497 (1981).
14. W. L. Warren, M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank, P. S. Winokur, and R. A. B. Devine, IEEE Trans. Nucl. Sci. 41, 1817 (1994).
15. H. D. Xiong, B. Jun, D. M. Fleetwood, R. D. Schrimpf, and J. R. Schwank, IEEE Trans. Nucl. Sci. 51, 3238 (2004).
16. P. Srinivasan, E. Simoen, L. Pantisano, C. Claeys, and D. Misra, Microelectron. Eng. 80, 226 (2005).
17. J. H. Scofield, N. Borland, and D. M. Fleetwood, IEEE Trans. Electron Devices 41, 1946 (1994).
18. T. L. Meisenheimer and D. M. Fleetwood, IEEE Trans. Nucl. Sci. 37, 1696 (1990).
19. S. T. Pantelides, S. N. Rashkeev, R. Buczko, D. M. Fleetwood, and R. D. Schrimpf, IEEE Trans. Nucl. Sci. 47, 2262 (2000).
20. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, IEEE Trans. Nucl. Sci. 31, 1453 (1984).