Charge trapping and low frequency noise in SOI buried oxides

IEEE Transactions on Nuclear Science

Volumn 51, Issue 6 II, 2004, Pages 3238-3242

  Xiong, H D ^a   Jun, B ^a   Fleetwood, D M ^a   Schrimpf, R D ^a   Schwank, J R ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

1 f noise; Charge trapping; Electron traps; Oxygen vacancies; Radiation effects; Si implantation; Silicon on insulator (SOI); Total ionizing dose

Indexed keywords

ELECTRIC CHARGE; ELECTRON TRAPS; MOSFET DEVICES; NATURAL FREQUENCIES; OXYGEN; RADIATION EFFECTS; SILICON WAFERS; SPURIOUS SIGNAL NOISE;

1/F NOISE; CHARGE TRAPPING; OXYGEN VACANCIES; SI IMPLANTATION; TOTAL IONIZING DOSE;

SILICON ON INSULATOR TECHNOLOGY;

EID: 11044225192     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.839139     Document Type: Conference Paper

References (32)

1. J. R. Schwank, V. Ferlet-Cavrois, M. R. Shaneyfelt, P. Paillet, and P. E. Dodd, "Radiation effects in SOI technologies," IEEE Trans. Nucl. Sci., vol. 50, pp. 522-538, Jun. 2003.
2. R. E. Stahlbush, G. J. Campisi, J. B. McKitterick, W. P. Maszara, P. Roitman, and G. A. Brown, "Electron and hole trapping in irradiated SIMOX, ZMR and BESOI buried oxides," IEEE Trans. Nucl. Sci., vol. 39, pp. 2086-2097, Dec. 1992.
3. W. L. Warren, M. R. Shaneyfelt, J. R. Schwank, D. M. Fleetwood, P. S. Winokur, R. A. B. Devine, W. P. Maszara, and J. B. McKitterick, "Paramagnetic defect centers in BESOI and SIMOX buried oxide," IEEE Trans. Nucl. Sci., vol. 40, pp. 1755-1764, Jun. 1993.
4. B. J. Mrstik, H. L. Hughes, P. J. McMarr, R. K. Lawrence, D. I. Ma, I. P. Isaacson, and R. A. Walker, "Hole and electron trapping in ion implanted thermal oxides and SIMOX," IEEE Trans. Nucl. Sci., vol. 47, pp. 2189-2195, Dec. 2000.
5. B. J. Mrstik, H. L. Hughes, P. J. McMarr, and P. Gouker, "Electron and hole trapping in thermal oxides that have been ion implanted," Microelectron. Eng., vol. 59, pp. 285-289, 2001.
6. B. J. Mrstik, H. L. Hughes, P. Gouker, R. K. Lawrence, and P. J. McMarr, "The role of nanoclusters in reducing hole trapping in ion implanted oxides," IEEE Trans. Nucl. Sci., vol. 50, pp. 1947-1953, Dec. 2003.
7. J. R. Schwank, D. M. Fleetwood, H. D. Xiong, M. R. Shaneyfelt, and B. L. Draper, "Generation of metastable electron traps in the near interfacial region of SOI buried oxides by ion implantation and their effect on device properties," Microelectron. Eng., vol. 72, pp. 362-366, 2004.
8. 2," IEEE Trans. Nucl. Sci., vol. 47, pp. 2269-2275, Dec. 2000.
9. D. M. Fleetwood, T. L. Meisenheimer, and J. H. Scofield, "1/f noise and radiation effects in MOS devices," IEEE Trans. Electron Dev., vol. 41, pp. 1953-1964, Nov. 1994.
10. J. H. Scofield and D. M. Fleetwood, "Physical basis for nondestructive tests of MOS radiation hardness," IEEE Trans. Nucl. Sci., vol. 38, pp. 1567-1577, Dec. 1991.
11. vMOS transistors," IEEE Trans. Electron Devices, vol. 41, pp. 1946-1952, Nov. 1994.
12. D. M. Fleetwood and J. H. Scofield, "Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in MOS transistors," Phys. Rev. Lett., vol. 64, pp. 579-582, Jan. 1990.
13. H. D. Xiong, D. M. Fleetwood, B. K. Choi, and A. L. Sternberg, "Temperature dependence and irradiation response of 1/f-noise in MOSFETs," IEEE Trans. Nucl. Sci., vol. 49, pp. 2718-2723, Dec. 2002.
14. H. D. Xiong, D. M. Fleetwood, and J. R. Schwank, "Low frequency noise and radiation response of buried oxides in SOI nMOS transistors," in Proc. IEE -Circuits Devices Syst., vol. 151, 2004, pp. 118-124.
15. P. S. Winokur, J. R. Schwank, P. J. McWhorter, P. V. Dressendorfer, and D. C. Turpin, "Correlating the radiation response of MOS capacitors and transistors," IEEE Trans. Nucl. Sci., vol. NS-31, pp. 1453-1460, Dec. 1984.
16. P. J. McWhorter and P. S. Winokur, "Simple technique for separating the effects of interface traps and trapped-oxide charge in MOS transistors," Appl. Phys. Lett., vol. 48, pp. 133-135, 1986.
17. J. H. Scofield, T. P. Doerr, and D. M. Fleetwood, "Correlation of preirradiation 1/f noise and postirradiation oxide trapped charge in MOS transistors," IEEE Trans. Nucl. Sci., vol. 36, pp. 1946-1955, Dec. 1989.
18. T. L. Meisenheimer and D. M. Fleetwood, "Effect of radiation-induced charge on 1/f noise in MOS devices," IEEE Trans. Nucl. Sci., vol. 37, pp. 1696-1702, Dec. 1990.
19. D. M. Fleetwood, H. D. Xiong, Z.-Y. Lu, C. J. Nicklaw, J. A. Felix, R. D. Schrimpf, and S. T. Pantelides, "Unified model of hole trapping, 1/f noise, and thermally stimulated current in MOS devices," IEEE Trans. Nucl. Sci., vol. 49, pp. 2674-2683, Dec. 2002.
20. 2 films after ion implantation," Appl. Surf. Sci., vol. 30, pp. 272-277, 1987.
21. T. P. Ma and P. V. Dressendorfer, Ionizing Radiation Effects in MOS Devices and Circuits. New York: Wiley, 1989.
22. T. R. Oldham, Ionizing Radiation Effects in MOS Oxides, Advances in Solid State Electronics and Technology (ASSET) Series, Singapore: World Scientific, 1999.
23. J. R. Schwank, P. S. Winokur, P. J. McWhorter, F. W. Sexton, P. V. Dressendorfer, and D. C. Turpin, "Physical mechanisms contributing to device 'Rebound'," IEEE Trans. Nucl. Sci., vol. NS-31, pp. 1434-1438, Dec. 1984.
24. A. J. Lelis, H. E. Boesch Jr., T. R. Oldham, and F. B. McLean, "Reversibility of trapped hole annealing," IEEE Trans. Nucl. Sci., vol. NS-35, pp. 1186-1191, Dec. 1988.
25. A. J. Lelis, T. R. Oldham, H. E. Boesch Jr., and F. B. McLean, "The nature of the trapped hole annealing process," IEEE Trans. Nucl. Sci., vol. 36, pp. 1808-1815, Dec. 1989.
26. A. J. Lelis and T. R. Oldham, "Time dependence of switching oxide traps," IEEE Trans. Nucl. Sci., vol. 41, pp. 1835-1843, Dec. 1994.
27. F. Balestra, S. Cristoloveanu, M. Benachir, J. Brini, and T. Elewa, "Double-gate silicon-on-insulator transistor with volume inversion - A new device with greatly enhanced performance," IEEE Electron Device Lett., vol. EDL-8, pp. 410-412, Sep. 1987.
28. G. K. Celler and S. Cristoloveanu, "Frontiers of silicon-on-insulator," J. Appl. Phys., vol. 93, pp. 4955-4978, May 2003.
29. T. Ernst, S. Cristoloveanu, G. Ghibaudo, T. Ouisse, S. Horiguchi, Y. Ono, Y. Takahashi, and K. Murase, "Ultimately thin double-gate SOI MOSFET's," IEEE Trans. Electron Devices, vol. 50, pp. 830-838, Mar. 2003.
30. E. Simoen, A. Mercha, C. Claeys, N. Lukyanchikova, and N. Garbar, "Critical discussion of the front-back gate coupling effect on the low-frequency noise in fully depleted SOI MOSFET's," IEEE Trans. Electron Devices, vol. 51, pp. 1008-1016, June 2004.
31. B. Jun, H. D. Xiong, C. R. Cirba, R. D. Schrimpf, D. M. Fleetwood, and S. Cristoloveanu, "Total dose effect on double gate operated fully depleted SOI transistors," IEEE Trans. Nucl. Sci., to be published.
32. H. K. Lim and J. G. Fossum, "Threshold voltage of thin-film silicon-on-insulator SOI MOSFETs," IEEE Trans. Electron Devices, vol. ED-30, pp. 1244-1251, 1983.