Nonvolatile quantum dot memory (NVQDM) in floating gate configuration: Device and circuit modeling

Proceedings of the IEEE Conference on Nanotechnology

Volumn 2, Issue , 2003, Pages 741-744

  Hasaneen, E S ^a   Rodriguez, A ^a   Yarlagadda, B ^a   Jain, F ^a   Heller, E ^b   Huang, W ^c   Lee, J ^d   Papadimitrakopoulos, F ^d  

^a University of Connecticut   (United States)

^b RSoft Design Group Inc   (United States)

^c UNITED STATES MILITARY ACADEMY   (United States)

^d UNIVERSITY OF CONNECTICUT   (United States)

Author keywords

Circuits; MOSFETs; Nanocrystals; Nonvolatile memory; Quantum capacitance; Quantum dots; Threshold voltage; Tunneling; US Department of Transportation; Voltage control

Indexed keywords

CAPACITANCE; CIRCUIT SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRON TUNNELING; FLASH MEMORY; NANOCRYSTALS; NANOTECHNOLOGY; NETWORKS (CIRCUITS); NONVOLATILE STORAGE; SEMICONDUCTOR QUANTUM DOTS; STATIC RANDOM ACCESS STORAGE; THRESHOLD VOLTAGE; VOLTAGE CONTROL;

DEVICE PARAMETERS; FLOATING-GATE VOLTAGE; MOSFETS; NANOCRYSTAL QUANTUM DOTS; NON-VOLATILE MEMORY; NONVOLATILE MEMORY CELLS; QUANTUM CAPACITANCE; US DEPARTMENT OF TRANSPORTATION;

MOSFET DEVICES;

EID: 3543091889     PISSN: 19449399     EISSN: 19449380     Source Type: Conference Proceeding    
DOI: 10.1109/NANO.2003.1231019     Document Type: Conference Paper

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