Effects of dot size and its distribution on electron number control in metal-oxide-semiconductor-field-effect-transistor memories based on silicon nanocrystal floating dots

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 40, Issue 3 B, 2001, Pages 2038-2040

  Wang, Haining ^a   Takahashi, Nobuyoshi ^a   Majima, Hideaki ^b   Inukai, Takashi ^b   Saitoh, Masumi ^a   Hiramoto, Toshiro ^c  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Coulomb blockade; Dot size distribution; MOSFET; Room temperature; Silicon floating dot memory; Single electron

Indexed keywords

SILICON NANOCRYSTAL FLOATING DOTS;

COULOMB BLOCKADE; ELECTRIC POTENTIAL; GATES (TRANSISTOR); NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM DOTS;

MOSFET DEVICES;

EID: 0035267330     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2038     Document Type: Article

References (9)

1. K. Yano, T. Ishii, T. Hashimoto, T. Kobayashi, F. Murai and K. Seki: IEEE Transactions on Electron Devices 41 (1994) 1628.
2. S. Tiwari, F. Rana, K. Chan, L. Shi and H. Hanafi: Appl. Phys. Lett. 69 (1996) 1232.
3. I. G. Kim, S. Han, H. Kim, J. Lee, B. Choi, S. Hwang, D. Ahn and H. Shin: Electron Device Lett. 20 (1999) 630.
4. Y. Shi, K. Saito, H. Ishikuro and T. Hiramoto: J. Appl. Phys. 84 (1998) 2358.
5. Y. Shi, K. Saito, H. Ishikuro and T. Hiramoto: Jpn. J. Appl. Phys. 38 (1999) 2453.
6. E. Nagata, N. Takahashi, Y. Yasuda, T. Inukai, H. Ishikuro and T. Hiramoto: Jpn. J. Appl. Phys. 38 (1999) 7230.
7. J. J. Welser, S. Tiwari, S. Rishton, K. Y. Lee and Y. Lee: Electron Device Lett. 18 (1997) 278.
8. H. Ishikuro and T. Hiramoto: Appl. Phys. Lett. 71 (1997) 3691.
9. D. Esteve: Single Charge Tunneling, eds. H. Grabert and M. H. Devoret (Plenum, New York 1992).