Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure

Journal of Electron Microscopy

Volumn 56, Issue 2, 2007, Pages 37-42

  Tanaka, Shigeyasu ^a   Naito, Akiyuki ^a   Honda, Yoshio ^a   Sawaki, Nobuhiko ^a   Ichihashi, Mikio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

AlGaN; Contact potential difference; Electron holography; GaN; Mean inner potential; Si

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; ORGANOMETALLICS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR DIODES; SILICON;

CONTACT POTENTIAL DIFFERENCE; CURRENT-VOLTAGE CHARACTERISTICS; HETEROJUNCTION DIODES; MEAN INNER POTENTIAL; METALLORGANIC VAPOR-PHASE EPITAXY; NONLINEAR BEHAVIOURS; SI;

III-V SEMICONDUCTORS;

EID: 35348910165     PISSN: 00220744     EISSN: 14779986     Source Type: Journal    
DOI: 10.1093/jmicro/dfm013     Document Type: Article

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