HVPE growth of GaN on a GaN templated (111) Si substrate

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 107-111

  Honda, Y ^a   Ishikawa, T ^a   Nishimura, Y ^a   Yamaguchi, M ^a   Sawaki, N ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; SILICA; SUBSTRATES; WIDE BAND GAP SEMICONDUCTORS; ZINC SULFIDE;

BAND-EDGE EMISSIONS; CATHODE LUMINESCENCE; GROWTH OF GAN; HIGH TEMPERATURE; SELECTIVE METALORGANIC VAPOR-PHASE EPITAXIES; SI SUBSTRATES; VAPOR PHASE EPITAXIAL; X RAY ROCKING CURVE;

SILICON;

EID: 35348880607     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390001     Document Type: Conference Paper

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