Decoupling of silicon carbide optical sensor response for temperature and pressure measurements

Journal of Applied Physics

Volumn 102, Issue 7, 2007, Pages

  Chakravarty, A ^a   Quick, N R ^b   Kar, A ^a  

^a University of Central Florida   (United States)

^b AppliCote Associates LLC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; OPTICAL SENSORS; OXIDATION; PRESSURE MEASUREMENT; REFRACTIVE INDEX; TEMPERATURE MEASUREMENT;

ELECTRICAL SENSORS; ELEVATED TEMPERATURES; HARSH ENVIRONMENTS; POLYCRYSTALLINE SILICON CARBIDE; SUPERIOR OXIDATION;

SILICON CARBIDE;

EID: 35348876637     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2786889     Document Type: Article

References (40)

1. M. E. Levinshtein, S. L. Rumyantsev, and M. S. Shur, Properties of Advanced Semiconductor Materials GaN, AlN, InN, BN, SiC, SiGe (Wiley, New York, 2001), pp. 93-147.
2. J. W. Berthold III, in Industrial Applications of Fiber Optic Sensors, Fiber Optic Sensors: An Introduction for Engineers and Scientists, edited by, E. Udd, (Wiley, New York, 1991), pp. 409-435.
3. T. J. Fawcett, J. T. Wolan, R. L. Myers, J. Walker, and S. E. Saddow, Appl. Phys. Lett. 85, 416 (2004).
4. G. W. Hunter, Development of SiC-Based Gas Sensors for Aerospace Applications, Materials Research Society Symposium Proceedings Vol. 815 (Materials Research Society, Pittsburgh, 2004) pp. 287-298.
5. D. J. Young, J. Du, C. A. Zorman, and W. H. Ko, IEEE Sens. J. 4, 464 (2004).
6. T. J. Fawcett, J. T. Wolan, R. L. Myers, J. Walker, and S. E. Saddow, Mater. Sci. Forum 457-460, 1499 (2003).
7. A. A. Volinsky and L. Ginzbursky, Irradiated Cubic Single Crystal SiC as a High Temperature Sensor, Materials Research Society Symposium Proceedings Vol. 792 (Materials Research Society, Pittsburgh, 2003), pp. 273-278.
8. N. R. Quick, U.S. Patent No. 6,271,576 (7 August 2001).
9. L.-Y. Chen, G. W. Hunter, P. G. Neudeck, D. Knight, C. C. Liu, and Q. H. Wu, SiC Based Gas Sensors in Proceedings of Ceramic Sensors III, 190th Meeting of the Electrochemical Society, San Antonio, Texas, 6-11 October 1996, Vol. 96-27, edited by, H. U. Anderson, M. Liu, and, N. Yamazoe, (The Electrochemical Society, Pennington, NJ, 1996), pp. 92-105.
10. A. Samman, S. Gebremariam, L. Rimai, X. Zhang, J. Hangas, and G. W. Auner, Sens. Actuators B 63, 91 (2000).
11. A. L. Spetz, Mater. Sci. Forum 389-393, 1415 (2002).
12. C. K. Kim, J. H. Lee, Y. H. Lee, N. I. Cho, and D. J. Kim, Sens. Actuators B 66, 116 (2000).
13. F. Serina, C. Huang, G. W. Auner, R. Naik, S. Ng, and L. Rimai, PdAlNSi or SiC Structure for Hydrogen Sensing Device, Materials Research Society Symposium Proceedings Vol. 622 (Materials Research Society, Pittsburgh, 2000), pp. T131-T136.
14. A Trinchi1, W. Wlodarski1, Y. X. Li, G. Faglia, and G. Sberveglieri, J. Phys. D 38, 754 (2005).
15. H. Wingbrant, H. Svenningstorp, P. Salomonsson, D. Kubinski, J. H. Visser, and A. L. Spetz, Sensors, Proceedings of IEEE, Vol. 1 (IEEE, Piscataway, NJ, 2003), pp. 428-433.
16. A. Trinchi, K. Galatsis, W. Wlodarski, and Y. X. Li, IEEE Sens. J. 3, 548 (2003).
17. P. G. Neudeck, J. Appl. Phys. 92, 2391 (2002).
18. G. Beheim, A. A. Ned, F. Masheeb, A. D. Kurtz, and J. M. Wolff, 19th International Congress on Instrumentation in Aerospace Simulation Facilities (ICIASF, 2001), (Cleveland, OH, August 27-30, 2001) (IEEE, Piscataway, NJ, 2001), pp. 240-245.
19. L. Uneus, T. Artursson, M. Mattsson, P. Ljung, R. Wigren, P. Martensson, M. Holmberg, I. Lundstrom, A. L. Spetz, and A. Lloyd, IEEE Sens. J. 5, 75 (2005).
20. H. Wingbrant, H. Svenningstorp, P. Salomonsson, P. Tengström, I. Lundström, and A. L. Spetz, Sens. Actuators B 93, 295 (2003).
21. A. A. Ned, A. D. Kurtz, F. Masheeb, and G. Beheim, ISA TECH/EXPO Technology Update Conference Proceedings (Houston, TX, September 10-13, 2001), Vol. 413 II (Instrument Society of America, Research Triangle Park, NC, 2001), pp. 19-27.
22. Z. Li and R. C. Bradt, Silicon Carbide Symposium, edited by, J. D. Cawley, and, C. E. Semler, (American Ceramic Society, Columbus, OH, 1987), pp. 313.
23. S. Dakshinamurthy, N. R. Quick, and A. Kar, J. Appl. Phys. 99, 094902 (2006).
24. M. V. Klein and T. E. Furtak, Optics (Wiley, New York, 1986), pp. 275-284 and 295-302.
25. J. Mazumder and A. Kar, Theory and Application of Laser Chemical Vapour Deposition (Plenum, New York, 1995), pp. 87-95.
26. S. Dakshinamurthy, N. R. Quick, and A. Kar, J. Phys. D 40, 353 (2006).
27. E. Hecht, Optics, 4th ed. (Pearson Education, Singapore, 2002), pp. 416-421.
28. G. L. Harris, in Properties of Silicon Carbide, edited by, G. L. Harris, (EMIS Datareviews Series, New York, 1995), Vol. N13, p. 8.
29. E. Pippel, J. Woltersdorf, H. O. Olafsson, and E. O. Sveinbjornsson, J. Appl. Phys. 97, 34302 (2005).
30. F. G. Della Corte, G. Cocorullo, M. Iodice, and I. Rendina, Appl. Phys. Lett. 77, 1614 (2000).
31. G. Cocorullo, F. G. Della Corte, and I. Rendina, Appl. Phys. Lett. 74, 3338 (1999).
32. H. Seong, H. Choi, S. Lee, J. Lee, and D. Choi, Appl. Phys. Lett. 85, 1256 (2004).
33. F. Engelbrecht, J. Zeman, G. Wellenhofer, G. Martinez, and U. Rossler, Phys. Rev. B 56, 7348 (1997).
34. W. Merzkirch, Flow Visualization (Academic, New York, 1974), pp. 63-69.
35. P. Y. Yu and M. Cardona, Phys. Rev. B 2, 3193 (1970).
36. W. J. Choyke and L. Patrick, Phys. Rev. 105, 1723 (1957).
37. A. Haug, Theoretical Solid State Physics (Pergamon, New York, 1972), Vol. 1, pp. 357-373.
38. N. Veissid, C. Y. An, A. Ferreira da Silva, and J. I. Pinto de Souza, Mater. Res. 2, 279 (1999).
39. D. K. Sengupta, N. R. Quick, and A. Kar, J. Laser Appl. 13, 26 (2001).
40. I. A. Salama, N. R. Quick, and A. Kar, J. Laser Appl. 16, 92 (2004).