Hydrogen gas sensors using 3C-SiC/Si epitaxial layers

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1499-1502

  Fawcett, T J ^a   Wolan, J T ^a   Myers, R L ^a   Walker, J ^a   Saddow, S E ^a  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

Author keywords

3C SiC; Gas sensor; Hydrogen

Indexed keywords

ELECTRON MOBILITY; EPITAXIAL GROWTH; HYDROGEN; NICKEL COMPOUNDS; PRESSURE EFFECTS; SENSITIVITY ANALYSIS; SILICON CARBIDE; SILICON WAFERS;

3C-SIC; CHEMICAL PROCESSING; EPITAXIAL LAYERS; HYDROGEN GAS SENSORS;

CHEMICAL SENSORS;

EID: 4043061498     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1499     Document Type: Conference Paper

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