-
2
-
-
33645698730
-
Enhancing microprocessor immunity to power supply noise with clock-data compensation
-
April
-
K. L. Wong, T. Rahal-Arabi, M. Ma, G. Taylor, "Enhancing microprocessor immunity to power supply noise with clock-data compensation," IEEE J. Solid-State Circuits, Vol. 41, No. 4, April, 2006.
-
(2006)
IEEE J. Solid-State Circuits
, vol.41
, Issue.4
-
-
Wong, K.L.1
Rahal-Arabi, T.2
Ma, M.3
Taylor, G.4
-
3
-
-
0036289401
-
The circuit, and physical design of the POWER4 microprocessor, pp. 27-51
-
January
-
J. D. Warnock, J. M. Keaty, J. Petrovick, et al, "The circuit, and physical design of the POWER4 microprocessor", pp. 27-51, IBM J. RES. & DEV. vol. 46, no. 1, January, 2002.
-
(2002)
IBM J. RES. & DEV
, vol.46
, Issue.1
-
-
Warnock, J.D.1
Keaty, J.M.2
Petrovick, J.3
-
4
-
-
0027150940
-
Proceedings of the 30th Design Automation Conference
-
June
-
Kamon, M. J. Tsuk, J. White, "Fast Henry: A Multipole Accelerated 3-D Inductance Extraction Program," Proceedings of the 30th Design Automation Conference, June 1993.
-
(1993)
-
-
Kamon, M.J.1
-
7
-
-
0242611627
-
Design and Validation of the Pentium® III and Pentium® 4 Processors Power Delivery
-
June
-
T. Rahal-Arabi, G. Taylor, M. Ma, C. Webb, "Design and Validation of the Pentium® III and Pentium® 4 Processors Power Delivery," 2002 Symposium on VLSI Circuits Digest of Technical Papers, pp. 220-223, June, 2002.
-
(2002)
2002 Symposium on VLSI Circuits Digest of Technical Papers
, pp. 220-223
-
-
Rahal-Arabi, T.1
Taylor, G.2
Ma, M.3
Webb, C.4
-
9
-
-
21044457255
-
Compact Physical IR-Drop Models for Chip/Package Co-Design of Gigascale Integration (GSI)
-
June
-
K. Shaken and J. D. Meindl, "Compact Physical IR-Drop Models for Chip/Package Co-Design of Gigascale Integration (GSI)," IEEE Transactions on Electron Devices, vol. 52, no. 6, June 2005.
-
(2005)
IEEE Transactions on Electron Devices
, vol.52
, Issue.6
-
-
Shaken, K.1
Meindl, J.D.2
-
11
-
-
21644432592
-
A 65nm Logic Technology Featuring 35nm Gate Lengths,. Enhanced Channel Strain, 8 Cu Interconnect Layers, Low-k ILD and. 0.57μm. 2. SRAM Cell
-
Bai, et al., "A 65nm Logic Technology Featuring 35nm Gate Lengths,. Enhanced Channel Strain, 8 Cu Interconnect Layers, Low-k ILD and. 0.57μm. 2. SRAM Cell," International Electron Device Meeting Technical Digest, pp. 657-660, 2004.
-
(2004)
International Electron Device Meeting Technical Digest
, pp. 657-660
-
-
Bai1
-
13
-
-
33750598564
-
Fast Decap Allocation Algorithm For Robust On-Chip Power Delivery
-
March
-
Z. Qi, H. Li, S. X.-D. Tan, L. Wu, Y. Cai, and X. Hong, "Fast Decap Allocation Algorithm For Robust On-Chip Power Delivery," Proceedings of. International Symposium on Quality Electronic Design, March, 2005
-
(2005)
Proceedings of. International Symposium on Quality Electronic Design
-
-
Qi, Z.1
Li, H.2
Tan, S.X.-D.3
Wu, L.4
Cai, Y.5
Hong, X.6
-
15
-
-
2942668334
-
-
W. H. Lee, S. Pant and D. Blaauw, Analysis and Reduction of. On-chip Inductance Effects in Power Supply Grids, in Proceedings of. International Symposium on Quality Electronic Design, March, 2004.
-
W. H. Lee, S. Pant and D. Blaauw, "Analysis and Reduction of. On-chip Inductance Effects in Power Supply Grids," in Proceedings of. International Symposium on Quality Electronic Design, March, 2004.
-
-
-
-
16
-
-
0141940290
-
Sea of Leads (SoL) ultrahigh density wafer level chip input/output interconnections
-
Oct
-
M. S. Bakir, H. A. Reed, H. D. Thacker, P. A. Kohl, K. P. Martin, and J. D. Meindl, "Sea of Leads (SoL) ultrahigh density wafer level chip input/output interconnections," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2039-2048, Oct. 2003
-
(2003)
IEEE Trans. Electron Devices
, vol.50
, Issue.10
, pp. 2039-2048
-
-
Bakir, M.S.1
Reed, H.A.2
Thacker, H.D.3
Kohl, P.A.4
Martin, K.P.5
Meindl, J.D.6
-
18
-
-
0034452603
-
A 130nm generation logic technology, featuring 70nm transistors, dual Vt transistors and 6 layers of. Cu interconnects
-
Dec
-
S. Tyagi, et al, "A 130nm generation logic technology, featuring 70nm transistors, dual Vt transistors and 6 layers of. Cu interconnects", International Electron Device Meeting Technical Digest, Dec. 2000
-
(2000)
International Electron Device Meeting Technical Digest
-
-
Tyagi, S.1
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