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Volumn , Issue , 2007, Pages 1659-1666

Compact physical models for power supply noise and chip/package co-design of gigascale integration

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; MATHEMATICAL MODELS; MICROPROCESSOR CHIPS; PARAMETER ESTIMATION; SWITCHING;

EID: 35348843366     PISSN: 05695503     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ECTC.2007.374017     Document Type: Conference Paper
Times cited : (22)

References (19)
  • 2
    • 33645698730 scopus 로고    scopus 로고
    • Enhancing microprocessor immunity to power supply noise with clock-data compensation
    • April
    • K. L. Wong, T. Rahal-Arabi, M. Ma, G. Taylor, "Enhancing microprocessor immunity to power supply noise with clock-data compensation," IEEE J. Solid-State Circuits, Vol. 41, No. 4, April, 2006.
    • (2006) IEEE J. Solid-State Circuits , vol.41 , Issue.4
    • Wong, K.L.1    Rahal-Arabi, T.2    Ma, M.3    Taylor, G.4
  • 3
    • 0036289401 scopus 로고    scopus 로고
    • The circuit, and physical design of the POWER4 microprocessor, pp. 27-51
    • January
    • J. D. Warnock, J. M. Keaty, J. Petrovick, et al, "The circuit, and physical design of the POWER4 microprocessor", pp. 27-51, IBM J. RES. & DEV. vol. 46, no. 1, January, 2002.
    • (2002) IBM J. RES. & DEV , vol.46 , Issue.1
    • Warnock, J.D.1    Keaty, J.M.2    Petrovick, J.3
  • 4
    • 0027150940 scopus 로고
    • Proceedings of the 30th Design Automation Conference
    • June
    • Kamon, M. J. Tsuk, J. White, "Fast Henry: A Multipole Accelerated 3-D Inductance Extraction Program," Proceedings of the 30th Design Automation Conference, June 1993.
    • (1993)
    • Kamon, M.J.1
  • 9
    • 21044457255 scopus 로고    scopus 로고
    • Compact Physical IR-Drop Models for Chip/Package Co-Design of Gigascale Integration (GSI)
    • June
    • K. Shaken and J. D. Meindl, "Compact Physical IR-Drop Models for Chip/Package Co-Design of Gigascale Integration (GSI)," IEEE Transactions on Electron Devices, vol. 52, no. 6, June 2005.
    • (2005) IEEE Transactions on Electron Devices , vol.52 , Issue.6
    • Shaken, K.1    Meindl, J.D.2
  • 11
    • 21644432592 scopus 로고    scopus 로고
    • A 65nm Logic Technology Featuring 35nm Gate Lengths,. Enhanced Channel Strain, 8 Cu Interconnect Layers, Low-k ILD and. 0.57μm. 2. SRAM Cell
    • Bai, et al., "A 65nm Logic Technology Featuring 35nm Gate Lengths,. Enhanced Channel Strain, 8 Cu Interconnect Layers, Low-k ILD and. 0.57μm. 2. SRAM Cell," International Electron Device Meeting Technical Digest, pp. 657-660, 2004.
    • (2004) International Electron Device Meeting Technical Digest , pp. 657-660
    • Bai1
  • 15
    • 2942668334 scopus 로고    scopus 로고
    • W. H. Lee, S. Pant and D. Blaauw, Analysis and Reduction of. On-chip Inductance Effects in Power Supply Grids, in Proceedings of. International Symposium on Quality Electronic Design, March, 2004.
    • W. H. Lee, S. Pant and D. Blaauw, "Analysis and Reduction of. On-chip Inductance Effects in Power Supply Grids," in Proceedings of. International Symposium on Quality Electronic Design, March, 2004.
  • 16
    • 0141940290 scopus 로고    scopus 로고
    • Sea of Leads (SoL) ultrahigh density wafer level chip input/output interconnections
    • Oct
    • M. S. Bakir, H. A. Reed, H. D. Thacker, P. A. Kohl, K. P. Martin, and J. D. Meindl, "Sea of Leads (SoL) ultrahigh density wafer level chip input/output interconnections," IEEE Trans. Electron Devices, vol. 50, no. 10, pp. 2039-2048, Oct. 2003
    • (2003) IEEE Trans. Electron Devices , vol.50 , Issue.10 , pp. 2039-2048
    • Bakir, M.S.1    Reed, H.A.2    Thacker, H.D.3    Kohl, P.A.4    Martin, K.P.5    Meindl, J.D.6
  • 18
    • 0034452603 scopus 로고    scopus 로고
    • A 130nm generation logic technology, featuring 70nm transistors, dual Vt transistors and 6 layers of. Cu interconnects
    • Dec
    • S. Tyagi, et al, "A 130nm generation logic technology, featuring 70nm transistors, dual Vt transistors and 6 layers of. Cu interconnects", International Electron Device Meeting Technical Digest, Dec. 2000
    • (2000) International Electron Device Meeting Technical Digest
    • Tyagi, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.