High photo-to-dark-current ratio in SiGe/Si Schottky-barrier photodetectors by using an a-Si:H cap layer

IEEE Transactions on Electron Devices

Volumn 54, Issue 9, 2007, Pages 2386-2391

  Hwang, Jun Dar ^a   Chen, Y H ^b   Kung, C Y ^b   Liu, J C ^b,c  

^a DA YEH UNIVERSITY   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Amorphous silicon (a Si:H); Dark current; Infrared photodetector (PD); Photocurrent; Schottky barrier

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; DARK CURRENTS; HETEROJUNCTIONS; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES;

NOISE-REJECTION ABILITY; PHOTO-TO-DARK-CURRENT RATIO;

PHOTODETECTORS;

EID: 34848900615     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.901791     Document Type: Article

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