Fermi level pinning on Si0.83 Ge0.17 surface by inductively coupled plasma treatment

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 2, 2005, Pages 495-498

  Kim, Iee Gon ^a   Choi, Kyoung Jin ^a   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

PLASMAS; SURFACES; VACUUM; X RAY PHOTOELECTRON SPECTROSCOPY;

FERMI LEVEL PINNING; ICP TREATMENT; INDUCTIVELY COUPLED PLASMAS;

FERMI LEVEL;

EID: 31144444730     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1868652     Document Type: Conference Paper

References (12)

1. Z. Q. Ma, S. Mohammadi, P. Bhattacharya, L. P. B. Katehi, S. A. Alterovitz, and G. E. Ponchak, IEEE Trans. Microwave Theory Tech. 50, 1101 (2002).
2. Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, M.-J. Tsai, and C. W. Liu, IEEE Electron Device Lett. 24, 643 (2003).
3. J. Chen, K. M. Tan, N. Wu, W. J. Yoo, and S. H. D. Chan, J. Vac. Sci. Technol. A 21, 1210 (2003).
4. S. C. Ahn, S. Y. Han, J.-L. Lee, J. H. Moon, and B. T. Lee, Met. Mater. Int. 10, 103 (2004).
5. X. A. Cao, Appl. Phys. Lett. 75, 232 (1999).
6. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981), pp. 270-278.
7. D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott, J. Appl. Phys. 71, 1407 (1992).
8. V. Craciun, E. S. Lambers, R. K. Singh, and I. W. Boyd, Appl. Surf. Sci. 186, 237 (2002).
9. J. M. Madsen, Z. J. Cu, and C. G. Takoudis, J. Appl. Phys. 87, 2046 (2000).
10. V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, Appl. Phys. Lett. 75, 1261 (1999).
11. S.-L. Sihto, J. Slotte, J. Lento, K. Saarinen, E. V. Monakhov, A. Yu. Kuznetsov, and B. G. Svensson, Phys. Rev. B 68, 115307 (2003).
12. E. V. Monakhov, A. Yu. Kuznetsov, and B. G. Svensson, Phys. Rev. B 63, 245322 (2001).