A High-Performance SiGe-Si Multiple-Quantum-Well Heterojunction Phototransistor

IEEE Electron Device Letters

Volumn 24, Issue 10, 2003, Pages 643-645

  Pei, Zingway ^a   Liang, C S ^a   Lai, L S ^a   Tseng, Y T ^a   Hsu, Y M ^a   Chen, P S ^a   Lu, S C ^a   Tsai, M J ^a   Liu, C W ^a,b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Multiple quantum wells (MQWs); Phototransistors; SiGe

Indexed keywords

INTEGRATED CIRCUITS; LIGHT ABSORPTION; PHOTOTRANSISTORS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

MULTIPLE QUANTUM WELLS (MQW);

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0141918441     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2003.817870     Document Type: Article

References (15)

1. J.-S. Rieh, D. Klotzkin, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, "Monolithically integrated SiGe-Si PIN-HBT front-end photoreceivers," IEEE Photon. Technol. Lett., vol. 10, pp. 415-417, Mar., 1998.
2. H. Zimmermann and T. Heide, "A monolithically integrated 1- Gb/s optical receiver in 1 - um CMOS technology," IEEE Photon. Technol. Lett., vol. 13, pp. 711-713, July 2001.
3. M. B. Das, "Optoelectronic detectors and receivers: sSpeed and sensitivity limits," in Proc. Conf. Optoelectron. Microelectron. Mat. Devices, 1999, pp. 15-22.
4. S. G. Thomas, S. Csutak, R. E. Jones, S. Bharatan, C. Jasper, R. Thomas, T. Zirkle, and J. C. Campbell, "CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes," Electron. Lett., vol. 38, no. 20, pp. 1202-1204, 2002.
5. M. Ghioni, F. Zappa, V. P. Kesan, and J. Warnock, "A VLSI-compatible high-speed silicon photodetector for optical data link applications," IEEE Trans. Electron Devices, vol. 43, pp. 1054-1060, July 1996.
6. M. Yang, K. Rim, D. L. Rogers, J. D. Schaub, J. J. Welser, D. M. Kuchta, D. C. Boyd, F. Rodier, P. A. Rabidoux, J. T. Marsh, A. D. Ticknor, Q. Tang, A. Upham, and S. C. Ramac, "A high-speed, high-sensitivity silicon lateral trench photodetector," IEEE Electron Device Lett., vol. 23, pp. 395-397, July 2002.
7. M. Yang, J. Schaub, D. Rogers, M. Ritter, K. Rim, J. Welse, and B. Park, "High speed silicon lateral trench detector on SOI substrate." in IEDM Tech. Dig., 2001, pp. 547-550.
8. J. D. Schaub, R. Li, C. L. Schow, J. C. Campbell, G. W. Neudeck, and J. Denton, "Resonant-cavity-enhanced high speed Si photodiode grown by epitaxial lateral overgrowth," IEEE Photon. Technol. Lett., vol. 11, pp. 1647-1649, Dec. 1999.
9. M. K. Emsley, O. Dosunmu, and M. S. Unlu, "High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength," in Proc. Lasers Electro-Optics Soc., vol. 2, 2001, pp. 839-840.
10. T. Tashiro, T. Tatsumi, M. Sugiyama, T. Hashimoto, and T. Morikawa, "A selective epitaxial SiGe-Si planar photodetector for Si-based OEICs," IEEE Trans. Electron Devices, vol. 44, pp. 545-550, Apr. 1997.
11. J. C. Campbell, "Phototransistors for lightwave communications," in Semiconductors and Semimetals, 1985, pt. D, vol. 22, ch. 5, pp. 389-447.
12. H. Kamitsuna, Y. Matsuoka, S. Yamahata, and N. Shigekawa, "Ultrahigh-speed Inp-InGaAs DHPTS for OEMMIC," IEEE Trans. Microwave Theory Tech., vol. 49, pp. 1921-1925, Oct. 2001.
13. Z. Pei, C. S. Liang, L. S. Lai, Y. T. Tseng, Y. M. Hsu, P. S. Chen, S. C. Lu, C. M. Liu, M.-J. Tsai, and C. W. Liu. "High efficient 850 nm and 1310 nm multiple quantum well SiGe-Si heterojunction phototransistors with 1.25 plus GHz bandwidth (850 nm)," in IEDM Tech. Dig., 2002, pp. 297-300.
14. L. S. Lai, Y. T. Tseng, L. S. Lee, Y. S. Jean, Y. M. Hsu, H. P. Hwang, S. C. Lu, and M.-J. Tsai, "The high quality low temperature oxidation technology in a quasi self-aligned SiGe HBT," in Proc. Int. Symp. Electron Devices Microwave Optoelectron. Applicat., 2001, pp. 77-82.
15. J.-S. Rieh, O. Qasaimeh, L.-H. Lu, K. Yang, L. P. B. Katehi, P. Bhattacharya, and E. T. Croke, "Single- and dual-feedback transimpedance amplifiers implemented by SiGe HBT technology," IEEE Microwave Guided Wave Lett., vol. 8, pp. 63-65, Feb. 1998.