Nonalloyed transparent ohmic contact of indium tin oxide to p-type Si 0.8Ge0.2

Thin Solid Films

Volumn 493, Issue 1-2, 2005, Pages 203-206

  Hwang, J D ^a   Chang, W T ^a   Hseih, K H ^a   Yang, G H ^a   Wu, C Y ^a   Chen, P S ^b  

^a DA YEH UNIVERSITY   (Taiwan)

^b Ming Hsin Uinversity of Science and Technology   (Taiwan)

Author keywords

Indium tin oxide; Resistivity; Silicon germanium; Sputtering

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INFRARED DEVICES; OHMIC CONTACTS; OPTOELECTRONIC DEVICES;

CONTACT RESISTANCE; INDIUM TIN OXIDE;

INDIUM COMPOUNDS;

EID: 27144538031     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.08.006     Document Type: Article

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