Interdigitated Ge p-i-n photodetectors fabricated on a Si substrate using graded SiGe buffer layers

IEEE Journal of Quantum Electronics

Volumn 38, Issue 9, 2002, Pages 1238-1241

  Oh, Jungwoo ^b   Campbell, Joe C ^b   Thomas, Shawn G ^a,c   Bharatan, Sushil ^c   Thoma, Rainer ^c   Jasper, Craig ^c   Jones, Robert E ^d   Zirkle, Tom E ^a,c  

^a IEEE

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^c MOTOROLA INC   (United States)

^d MOTOROLA INC   (United States)

Author keywords

Germanium; Germanium silicon; Optical receivers; Photodetectors; Photodiodes

Indexed keywords

CARRIER MOBILITY; LIGHT ABSORPTION; PHOTOCURRENTS; PHOTODIODES; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SURFACE ROUGHNESS; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; EPITAXIAL LAYER; INTERDIGITATED PHOTODETECTOR; THREADING DISLOCATION; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

PHOTODETECTORS;

EID: 0036712177     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2002.802165     Document Type: Article

References (9)

1. Effects of high space-charge fields on the response of microwave photodetectors
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3. New infrared detector on a silicon chip
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5. High-quality Ge epilayers on Si with low threading-dislocation densities
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8. High-quality Ge films on Si substrate using Sb surfactant-mediated graded SiGe buffers
9. Controlling threading dislocation densities in Ge on Si using graded SiGe layers and chemical-mechanical polishing