Improving the Performance of AlGaInP Laser Diode by Oxide Annealing

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 10 A, 2003, Pages

  Hwang, Jun Dar ^a   Lin, Chao Yang ^a  

^a DA YEH UNIVERSITY   (Taiwan)

Author keywords

AIGaInP; Characteristic temperature; External quantum efficiency; Laser diodes; Slope efficiency; Threshold current

Indexed keywords

ANNEALING; EPITAXIAL GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; QUANTUM EFFICIENCY; SEMICONDUCTOR DOPING; SEMICONDUCTOR LASERS; SILICA; THERMAL EFFECTS;

BARRIER REDUCTION LAYERS; SLOPE EFFICIENCY (SE);

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0344083350     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1116     Document Type: Article

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