Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

Journal of Crystal Growth

Volumn 227-228, Issue , 2001, Pages 766-769

  Gao, F ^a   Lin, Y X ^a   Huang, D D ^a   Li, J P ^a   Sun, D Z ^a   Kong, M Y ^a   Zeng, Y P ^a   Li, J M ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

A1. Annealing; A3. Molecular beam epitaxy; B1. Germanium silicon alloys; B2. Semiconducting materials

Indexed keywords

ANNEALING; MOLECULAR BEAM EPITAXY; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; THERMODYNAMIC STABILITY;

FORCE-BALANCE THEORY;

HETEROJUNCTIONS;

EID: 0035399121     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)00823-5     Document Type: Conference Paper

References (13)