Surface passivated function of GaAs MSM-PDs using photoelectrochemical oxidation method

IEEE Photonics Technology Letters

Volumn 17, Issue 2, 2005, Pages 462-464

  Lee, Ching Ting ^a   Lee, Hsin Ying ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL FORMOSA UNIVERSITY   (Taiwan)

Author keywords

GaAs; InAlGaP; Metal semiconductor metal photodetectors (MSM PDs); Oxide passivation layer; Photoelectrochemical(PEC) oxidation method

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CURRENT MEASUREMENT; ELECTROCHEMISTRY; ELECTRODES; PASSIVATION; PHOTOOXIDATION; REDUCTION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE TESTING; SURFACE REACTIONS;

INDIUM ALUMINUM GALLIUM PHOSPHIDE; METAL SEMICONDUCTOR METAL PHOTODETECTORS (MSM-PDS); OXIDE PASSIVATION LAYER; PHOTOELECTROCHEMICAL (PEC) OXIDATION METHOD; SURFACE BREAKDOWN; SURFACE PASSIVATED FUNCTION;

PHOTODETECTORS;

EID: 13444311922     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.839447     Document Type: Article

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