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Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 385-391

Plasma assisted oxidation of SiGe layers at 500°C: Interface characterization

(4) Tetelin C a,c Wallart, X a Vescan, L b Nys, J P a

a INSTITUT D ELECTRONIQUE (France)

b FORSCHUNGSZENTRUM JÜLICH (Germany)

c Maison des Technologies (France)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; INTERFACES (MATERIALS); OXIDATION; PLASMA APPLICATIONS; SEMICONDUCTING GERMANIUM COMPOUNDS; SILICA; SUBSTRATES;

LAYERS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 18344408667 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/S0169-4332(96)00176-6 Document Type: Article

Times cited : (8)

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