Atomic layer deposition of bi1-x-y tix siy Oz Thin Films Using H2 O oxidant and their characteristics depending on si content

Journal of the Electrochemical Society

Volumn 154, Issue 11, 2007, Pages

  Hwang, Gyu Weon ^a,d   Kim, Wan Don ^a   Hwang, Cheol Seong ^a,c   Min, Yo Sep ^b,e   Cho, Young Jin ^b,e  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c ELECTROCHEMICAL SOCIETY

^d Korea Institute of Science and Technology   (South Korea)

^e Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; PERMITTIVITY; SILICON; THIN FILMS;

TITANIUM TETRAISOPROPOXIDE;

ATOMIC LAYER DEPOSITION;

EID: 34848863973     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2772426     Document Type: Article

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