Bi1-x-yTixSiyOz (BTSO) thin films for dynamic random access memory capacitor applications

Chemical Vapor Deposition

Volumn 11, Issue 1, 2005, Pages 38-43

  Min, Yo Sep ^a,b   Cho, Young Jin ^a   Asanov, Igor P ^c   Han, Jeong Hee ^a   Kim, Wan Don ^b   Hwang, Cheol Seong ^b  

^a Korea Advanced Nano Fab Center (KANC)   (South Korea)

^b Seoul National University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

ALD; BTSO; Capacitor; DRAM; High k dielectrics

Indexed keywords

BISMUTH COMPOUNDS; CAPACITORS; CURRENT DENSITY; DYNAMIC RANDOM ACCESS STORAGE; FILM GROWTH; LEAKAGE CURRENTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); BI1-X-YTIXSIYOZ (BTSO); HIGH-K DIELECTRICS; LEAKAGE CURRENT DENSITY;

THIN FILMS;

EID: 13844298358     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200406328     Document Type: Article

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