-
1
-
-
0032256582
-
-
K. Hieda, K. Eguchi, N. Fukushima, T. Aoyama, K. Natori, M. Kiyotoshi, S. Yamazaki, M. Izuha, S. Niwa, Y. Fukuzimi, Y. Ishibashi, Y. Kohyama, T. Arikado, and K. Okumura, Tech. Dig. - Int. Electron Devices Meet., 1998, 807.
-
(1998)
Tech. Dig. - Int. Electron Devices Meet.
, pp. 807
-
-
Hieda, K.1
Eguchi, K.2
Fukushima, N.3
Aoyama, T.4
Natori, K.5
Kiyotoshi, M.6
Yamazaki, S.7
Izuha, M.8
Niwa, S.9
Fukuzimi, Y.10
Ishibashi, Y.11
Kohyama, Y.12
Arikado, T.13
Okumura, K.14
-
2
-
-
17644431168
-
-
K. Hieda, K. Eguchi, J. Nakahira, M. Kiyotoshi, M. Nakabayashi, H. Tomita, M. Izuha, T. Aoyama, S. Niwa, K. Tsunoda, S. Yamazaki, J. Lin, A. Shimada, K. Nakamura, T. Kubota, M. Asano, K. Hosaka, Y. Fukuzimi, Y. Ishibashi, and Y. Kohyama, Tech. Dig. - Int. Electron Devices Meet., 1999, 789.
-
(1999)
Tech. Dig. - Int. Electron Devices Meet.
, pp. 789
-
-
Hieda, K.1
Eguchi, K.2
Nakahira, J.3
Kiyotoshi, M.4
Nakabayashi, M.5
Tomita, H.6
Izuha, M.7
Aoyama, T.8
Niwa, S.9
Tsunoda, K.10
Yamazaki, S.11
Lin, J.12
Shimada, A.13
Nakamura, K.14
Kubota, T.15
Asano, M.16
Hosaka, K.17
Fukuzimi, Y.18
Ishibashi, Y.19
Kohyama, Y.20
more..
-
3
-
-
0033339642
-
-
J.W. Kim, S.D. Nam, S.H. Lee, S.J. Won, W.D. Kim, C.Y. Yoo, Y.W. Park, S.I. Lee, and M.Y. Lee, Tech. Dig. - Int. Electron Devices Meet., 1999, 793.
-
(1999)
Tech. Dig. - Int. Electron Devices Meet.
, pp. 793
-
-
Kim, J.W.1
Nam, S.D.2
Lee, S.H.3
Won, S.J.4
Kim, W.D.5
Yoo, C.Y.6
Park, Y.W.7
Lee, S.I.8
Lee, M.Y.9
-
4
-
-
0030234306
-
-
C.S. Kang, C.S. Hwang, H.J. Cho, B.T. Lee, S.O. Park, J.W. Kim, H. Horii, S.I. Lee, and M.Y. Lee, Jpn. J. Appl. Phys., Part 1, 35, 4890 (1996).
-
(1996)
Jpn. J. Appl. Phys., Part 1
, vol.35
, pp. 4890
-
-
Kang, C.S.1
Hwang, C.S.2
Cho, H.J.3
Lee, B.T.4
Park, S.O.5
Kim, J.W.6
Horii, H.7
Lee, S.I.8
Lee, M.Y.9
-
5
-
-
0032607090
-
-
I. Levin, R.D. Leapman, D.L. Kaiser, P.C. van Buskirk, S. Bilodeau, and R. Carl, Appl. Phys. Lett., 75, 1299 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 1299
-
-
Levin, I.1
Leapman, R.D.2
Kaiser, D.L.3
Van Buskirk, P.C.4
Bilodeau, S.5
Carl, R.6
-
6
-
-
0001309927
-
-
M. Yamamuka, T. Kawahara, M. Tarutani, T. Horikawa, T. Oomori, and K. Ono, J. Appl. Phys., 86, 1082 (1999).
-
(1999)
J. Appl. Phys.
, vol.86
, pp. 1082
-
-
Yamamuka, M.1
Kawahara, T.2
Tarutani, M.3
Horikawa, T.4
Oomori, T.5
Ono, K.6
-
7
-
-
0034446828
-
-
C.S. Hwang, Jae Hoo Park, D.Y. Yang, C.H. Yang, D.H. Kim, Y.K. Han, K.Y. Oh, and C.J. Hwang, Integr. Ferroelectr., 30, 37 (2000).
-
(2000)
Integr. Ferroelectr.
, vol.30
, pp. 37
-
-
Hwang, C.S.1
Park, J.H.2
Yang, D.Y.3
Yang, C.H.4
Kim, D.H.5
Han, Y.K.6
Oh, K.Y.7
Hwang, C.J.8
-
8
-
-
0001489498
-
-
Y. Gao, T. Tran, and P. Alluri, Appl. Phys. Lett., 75, 415 (1999).
-
(1999)
Appl. Phys. Lett.
, vol.75
, pp. 415
-
-
Gao, Y.1
Tran, T.2
Alluri, P.3
-
9
-
-
0029403740
-
-
J.H. Han, H.-K. Ryu, C.-H. Chung, B.-G. Yu, and S.H. Moon, J. Electrochem. Soc., 142, 3980 (1995).
-
(1995)
J. Electrochem. Soc.
, vol.142
, pp. 3980
-
-
Han, J.H.1
Ryu, H.-K.2
Chung, C.-H.3
Yu, B.-G.4
Moon, S.H.5
-
11
-
-
0001625485
-
-
G.W. Dietz, M. Schumacher, R. Waser, S.K. Streiffer, C. Basceri, and A.I. Kingon, J. Appl. Phys., 82, 2359 (1997).
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 2359
-
-
Dietz, G.W.1
Schumacher, M.2
Waser, R.3
Streiffer, S.K.4
Basceri, C.5
Kingon, A.I.6
-
12
-
-
0031125983
-
-
M. Yamamuka, T. Kawahara, T. Horikawa, and K. Ono, Jpn. J. Appl. Phys., Part 1, 36, 2555 (1997).
-
(1997)
Jpn. J. Appl. Phys., Part 1
, vol.36
, pp. 2555
-
-
Yamamuka, M.1
Kawahara, T.2
Horikawa, T.3
Ono, K.4
-
13
-
-
0011191489
-
-
C.S. Hwang, J. Park, D.S. Hwang, and C.Y. Yoo, J. Electrochem. Soc., 148, G636 (2001).
-
(2001)
J. Electrochem. Soc.
, vol.148
-
-
Hwang, C.S.1
Park, J.2
Hwang, D.S.3
Yoo, C.Y.4
-
15
-
-
84957230126
-
-
J.C. Rey, L.-Y. Cheng, J.P. McVittie, and K.C. Saraswat, J. Vac. Sci. Technol. A, 9, 1083 (1991).
-
(1991)
J. Vac. Sci. Technol. A
, vol.9
, pp. 1083
-
-
Rey, J.C.1
Cheng, L.-Y.2
McVittie, J.P.3
Saraswat, K.C.4
-
16
-
-
0000522337
-
-
A. Yuuki, Y. Matsui, and K. Tachibana, Jpn. J. Appl. Phys., Part 1, 28, 212 (1989).
-
(1989)
Jpn. J. Appl. Phys., Part 1
, vol.28
, pp. 212
-
-
Yuuki, A.1
Matsui, Y.2
Tachibana, K.3
-
18
-
-
0000638237
-
-
T. Kawahara, S. Matsuno, M. Yamamuka, M. Tarutani, T. Sato, T. Horikawa, F. Uchikawa, and K. Ono, Jpn. J. Appl. Phys., Part 1, 38, 2205 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 2205
-
-
Kawahara, T.1
Matsuno, S.2
Yamamuka, M.3
Tarutani, M.4
Sato, T.5
Horikawa, T.6
Uchikawa, F.7
Ono, K.8
-
19
-
-
0023416287
-
-
Y. Matsui, A. Yuuki, N. Morita, and K. Tachibana, Jpn. J. Appl. Phys., Part 1, 26, 1575 (1987).
-
(1987)
Jpn. J. Appl. Phys., Part 1
, vol.26
, pp. 1575
-
-
Matsui, Y.1
Yuuki, A.2
Morita, N.3
Tachibana, K.4
-
20
-
-
17444445131
-
-
K. Ono, T. Horikawa, T. Shibano, N. Mikami, T. Kuroiwa, T. Kawahara, S. Matsuno, F. Uchikawa, S. Satoh, and H. Abe, Tech. Dig. - Int. Electron Devices Meet., 1998, 803.
-
(1998)
Tech. Dig. - Int. Electron Devices Meet.
, pp. 803
-
-
Ono, K.1
Horikawa, T.2
Shibano, T.3
Mikami, N.4
Kuroiwa, T.5
Kawahara, T.6
Matsuno, S.7
Uchikawa, F.8
Satoh, S.9
Abe, H.10
|