Characteristics of amorphous Bi2Ti2O7thin films grown by atomic layer deposition for memory capacitor applications

Journal of the Electrochemical Society

Volumn 153, Issue 1, 2006, Pages

  Hwang, Gyu Weon ^a   Kim, Wan Don ^a   Min, Yo Sep ^a,b   Cho, Young Jin ^a,b   Hwang, Cheol Seong ^a  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CAPACITORS; RUTHENIUM; THERMAL EFFECTS; TITANIUM COMPOUNDS;

ATOMIC LAYER DEPOSITION; CAPACITOR APPLICATIONS; CONFORMAL FILM;

THIN FILMS;

EID: 33645509282     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2133713     Document Type: Article

References (26)

1. International Technology Roadmap for Semiconductors 2001, Semiconductor Industry Association 〈 http://public.itrs.net/ 〉.
2. S. Won, W. Kim, C. Yoo, S. Kim, Y. Park, J. Moon, and M. Lee, Tech. Dig. - Int. Electron Devices Meet., 2000, 789.
3. S. Y. Kang, H. J. Lim, C. S. Hwang, and H. J. Kim, J. Electrochem. Soc., 149, C317 (2002).
4. J. H. Choi, J. Chung, S. Oh, J. S. Choi, C. Yoo, S. Kim, U. Chung, and J. Moon, Tech. Dig. - Int. Electron Devices Meet., 2003, 28.3.1.
5. M. Hiratani, T. Hamada, S. Iijima, Y. Ohji, I. Asano, N. Nakanishi, and S. Kimura, VLSI Digest of Technical Papers, 2001, 41.
6. J. P. Chang and Y. Lin, J. Appl. Phys., 90, 2694 (2001).
7. H. J. Cho, J. B. Park, S. S. Yu, J. S. Roh, and H. K. Yoon, in Proceedings of the 12th IEEE International Symposium on Applications of Ferroelectrics, p. 55 (2000).
8. H. Schroeder and A. Kingon, Nanoelectronics and Information Technology: Advanced Electronic Materials and Novel Devices, R. Waser, Editor, Chap. IV, pp. 541-561, Wiley-VCH, Weinheim (2003).
9. C. S. Hwang, S. O. Park, C. S. Kang, H. J. Cho, H. K. Kang, S. I. Lee, and M. Y. Lee, Appl. Phys. Lett., 67, 2819 (1995).
10. M. Nayak, S. Ezhilvalavan, and T. Y. Tseng, in Handbook of Thin Film Materials, Vol. 3, H. S. Nalwa, Editor, Chap. 2, pp. 99-167, Academic Press, San Diego, CA (2002).
11. M. Tiitta and L. Niinisto, Chem. Vap. Deposition, 3, 167 (1997).
12. C. S. Hwang, S. Y. No, J. Park, H. J. Kim, H. J. Cho, Y. K. Han, and K. Y. Oh, J. Electrochem. Soc., 149, G585 (2002).
13. Y. S. Min, Y. J. Cho, I. P. Asanov, J. H. Han, W. D. Kim, and C. S. Hwang, Chem. Vap. Deposition, 11, 38 (2005).
14. Y. S. Min, Y. J. Cho, and C. S. Hwang, Electrochem. Solid-State Lett., 7, F85 (2004).
15. Z. Xiao, X. Wu, S. Wang, H. Wang, Z. Wang, S. Shan, and M. Wang, Mater. Res. Bull., 36, 1949 (2001).
16. X. N. Yang, B. B. Huang, H. B. Wang, S. X. Shang, W. F. Yao, and J. Y. Wei, J. Cryst. Growth, 270, 98 (2004).
17. X.-M. Wu, Sh. W. Wang, H. Wang, Z. Wang, S. X. Shang, and M. Wang, Thin Solid Films, 370, 30 (2000).
18. S. W. Wang, H. Wang, X. Wu, S. Shang, M. Wang, Z. Li, and W. Lu, J. Cryst. Growth, 224, 323 (2001).
19. M. Schuisky, K. Kukli, M. Ritala, A. Harsta, and M. Leskela, Chem. Vap. Deposition, 6, 139 (2000).
20. E. I. Speranskaya, I. S. Rez, L. V. Kozolova, V. M. Skorikov, and V. I. Slavov, Inorg. Mater., 1, 213 (1965).
21. R. G. Gordon, D. Hansmann, E. Kim, and J. Shepard, Chem. Vap. Deposition, 9, 73 (2003).
22. S. K. Lee, J. H. Kim, D. H. Choi, M. W. Hwang, M. Y. Um, Y. H. Kim, J. Y. Kim, and H. J. Kim, J. Korean Vacuum Society, 9, 373 (2000).
23. P. W. Atkins, in Physical Chemistry, 6th ed., pp. 936-937, Freeman, New York (1998).
24. W. E. Morgan, W. J. Stec, and J. R. Van Wazer, Inorg. Chem., 12, 953 (1973).
25. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, J. Chastain, Editor, pp. 72-73, 190-191, Perkin-Elmer Corp., Eden Prairie, MN (1992).
26. O. S. Kwon, S. K. Kim, C. S. Hwang, and J. Jeong, J. Electrochem. Soc., 152, C229 (2005).