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Microelectronics Journal

Volumn 38, Issue 8-9, 2007, Pages 910-914

Investigation of Zr-N thin films for use as diffusion barrier in Cu metallization

(4) Wang, Ying a Cao, Fei a Ding, Minghui a Yang, Dawei a

a HARBIN ENGINEERING UNIVERSITY (China)

Author keywords

Cu metallization; Diffusion barrier; Semiconductor; Zr N

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; COPPER COMPOUNDS; CRYSTALLITES; DIFFUSION BARRIERS; METALLIZING; PHASE COMPOSITION; THERMODYNAMIC STABILITY; ZIRCONIUM ALLOYS;

COMPOSITION PROFILES; CONTACT SYSTEMS; FLOW RATIO; NEGATIVE SUBSTRATE BIAS; ZR-N THIN FILMS;

THIN FILMS;

EID: 34748914430 PISSN: 00262692 EISSN: None Source Type: Journal
DOI: 10.1016/j.mejo.2007.06.001 Document Type: Article

Times cited : (8)

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