Growth and properties of LPCVD W-Si-N barrier layers

Microelectronic Engineering

Volumn 55, Issue 1-4, 2001, Pages 189-195

  Bystrova, S ^a   Holleman, J ^a   Woerlee, P H ^a,b  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; COMPUTATIONAL METHODS; CRYSTALLINE MATERIALS; METALLIZING; SILICON WAFERS; THERMODYNAMIC STABILITY;

COPPER METALLIZATION; LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD);

TUNGSTEN COMPOUNDS;

EID: 0034832101     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(00)00447-0     Document Type: Article

References (8)

1. E. Blanquet et al., Microelectron. Eng. 37-38 (1997) 189-195.
2. J.G. Fleming et al., Thin Solid Films 320 (1998) 10-14.
3. T. Nakajiama et al., J. Electrochem. Soc. 134 (12) (1987) 3175-3178.
4. GTT-ChemSage, Thermochemical Software, 1998.
5. Gmelin Handbook of Inorganic and Organic Chemistry, Vol. A5b, Springer-Verlag, 1993, W. Suppl.
6. J.E.J. Shmitz, M.J. Buiting, R.C. Ellwanger, in: R.S. Blewer, M. McConica (Eds.), Tungsten and Other Refractory Metals for VLSI Applications IV, Material Research Society, Pittsburgh, 1989, p. 17.
7. CRC Handbook of Chemistry and Physics, Vol. 76, 1995, ISSN 0147-6262.
8. A. Hasper, Chemical Vapour Deposition of Tungsten for the Application in Integrated Circuits, Universiteit Twente, 1992, Ph.D. thesis; ISBN 90-9005151-1.