Field emission mechanism from a single-layer ultra-thin semiconductor film cathode

Journal of Physics D: Applied Physics

Volumn 40, Issue 19, 2007, Pages 5828-5832

  Duan, Zhi Qiang ^a   Wang, Ru Zhi ^a,b   Yuan, Rui Yang ^a   Yang, Wei ^a   Wang, Bo ^a   Yan, Hui ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRON SCATTERING; FIELD EMISSION; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTOR MATERIALS;

ENERGY BAND BENDING; QUANTUM STRUCTURES; SINGLE-LAYER ULTRA-THIN SEMICONDUCTOR FILM CATHODE (SUSC);

THIN FILMS;

EID: 34748892004     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/19/005     Document Type: Article

References (29)

1. Brodie I and Schwoebel P R 1994 Proc. IEEE 82 1006
2. Xu N S and Ejaz Huq S 2005 Mater. Sci. Eng. R 48 47
3. Yoder M N 1996 IEEE Trans. Electron Devices 43 1633
4. Iijima S 1991 Nature 354 56
5. Wang B, Wang R Z, Zhou H, Yan X H, Cao J X, Wang H and Yan H 2004 Microelectron. J. 35 371
6. Lee Y-C, Lin S-J, Lin I-N and Cheng H-F 2005 J. Appl. Phys. 97 054310
7. Zhao J P, Chen Z Y, Wang X and Shi T S 2000 J. Appl. Phys. 87 8098
8. Goncharuk N M 2003 Mater. Sci. Eng. A 353 36
9. Semet V, Vu Thien Binh, Zhang J P, Yang J, Asif Khan M and Tsu R 2004 Appl. Phys. Lett. 84 1937
10. Wang R Z, Ding X M, Wang B, Xue K, Xu J B, Yan H and Hou X Y 2005 Phys. Rev. B 72 125310
11. Zhirnov V V, Choi W B and Hren J J 1996 Appl. Surf. Sci. 94-95 123
12. Forrest R D, Burden A P, Silva S R P, Cheah L K and Shi X 1998 Appl. Phys. Lett. 73 3784
13. Ji H, Jin Z S, Gu C Z, Wang J Y, Lu X Y, Liu B B, Gao C X, Yuan G and Wang W B 2000 J. Vac. Sci. Technol. B 18 2710
14. Gu C Z, Jin Z S, Wang Y G, Jin W C, Ji H, Yuan G and Wang W B 2000 Diamond Relat. Mater. 9 1604
15. Wang Y X, Li Y A, Feng W, Li W Q, Zhao C H, Liu L H, Feng K C and Zhao Y N 2005 Appl. Surf. Sci. 243 394
16. Semet V, Binh V T, Zhang J P, Yang J, Asif Khan M and Tsu R 2004 Appl. Phys. Lett. 84 1937
17. Binh V T and Adessi Ch. 2000 Phys. Rev. Lett. 85 864
18. Chen J, Chen J, Deng S Z, She J C and Xu N S 1999 Ultramicroscopy 79 89
19. Tsang W M, Stolojan V, Giusca C, Poa C H P, Sealy B and Silva S R P 2006 J. Vac. Sci. Technol. B 24 958
20. Ternyak O, Akhvlediani R, Hoffman A, Wong W K, Lee S T, Lifshitz Y, Daren S and Cheifetz E 2005 J. Appl. Phys. 98 123522
21. Fursey G N and Glazanov D V 1998 J. Vac. Sci. Technol. B 16 910
22. Forbes R G and Xanthakis J P 2007 Surf. Interface Anal. 39 139
23. Wang R Z, Wang B, Wang H, Zhou H, Huang A P, Zhu M K, Yan H and Yan X H 2002 Appl. Phys. Lett. 81 2782
24. Wang R Z, Ding X M, Xue K, Zhao B L, Yan H and Hou X Y 2004 Phys. Rev. B 70 195305
25. Wang R Z and Yan X H 2000 Chin. Phys. Lett. 17 598
26. Goulet T, Keszei E and Jay-Gerin J P 1988 Phys. Rev. A 37 2176
27. Litovchenko V, Evtukh A, Kryuchenko Yu, Goncharuk N, Yilmazoglu O, Mutamba K, Hartnagel H L and Pavlidis D 2004 J. Appl. Phys. 96 867
28. Gundlach K H 1966 Solid-State Electron. 9 949
29. Büttiker M 1988 IBM J. Res. Dev. 32 63