Influence of diamond film thickness on field emission characteristics

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 18, Issue 6, 2000, Pages 2710-2713

  Ji, H ^a   Jin, Z S ^a   Gu, C Z ^a   Wang, J Y ^a   Lu, X Y ^a   Liu, B B ^a   Gao, C X ^a   Yuan, G ^b   Wang, W B ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; ELECTRIC FIELD EFFECTS; ELECTRON EMISSION; FILM GROWTH; GRAIN GROWTH; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY;

FILM THICKNESS; THRESHOLD FIELD STRENGTH;

DIAMOND FILMS;

EID: 0034318265     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1326945     Document Type: Article

References (4)

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2. J. Van der Weide and R. J. Nemanich, Appl. Phys. Lett. 62, 1878 (1993).
3. F. Lacher, C. Wild, D. Behr, and P. Koidl, Diamond Relat. Mater. 6, 1111 (1997).
4. G. J. Wojak, V. V. Zhirnov, W. B. Choi, J. J. Cuomo, and J. J. Hren, Tech. Dig. IVMC'97, 1997, p. 146.