Electron emission from diamond thin films deposited by microwave plasma-chemical vapor deposition method

Diamond and Related Materials

Volumn 9, Issue 9, 2000, Pages 1604-1607

  Gu, Changzhi ^a   Jin, Zengsun ^a   Wang, Yuguang ^a   Jin, Wencheng ^a   Ji, Hong ^a   Yuan, Guang ^b   Wang, Weibiao ^b  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN INSTITUTE OF OPTICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRON EMISSION; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MORPHOLOGY; SURFACE PROPERTIES; SYNTHESIS (CHEMICAL); THRESHOLD VOLTAGE;

DEPOSITION PARAMETERS; FILM THICKNESS; GRAIN ORIENTATION; MICROWAVE PLASMA CHEMICAL VAPOR DEPOSITION METHOD;

DIAMOND FILMS;

EID: 0034276210     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(00)00325-3     Document Type: Article

References (10)

1. S. Iannazzo Solid-State Electron. 36 1993 301
2. I. Brodie C.A. Spindt Adv. Electron. Electron Phys. 83 1992 1
3. M.W. Geis J.C. Twichell N.N. Efremow K. Krohn T.M. Lyszczarz Appl. Phys. Lett. 68 1996 2294
4. V.V. Zhinov G.J. Wojak W.B. Choi J.J. Cuomo J.J. Hern J. Vac. Sci. Technol. A 15 1997 1733
5. V.V. Zhirnov J.J. Hern MRS Bull. 9 1998 42
6. W.A. Yarbrough R. Messier Science 247 1990 688
7. C. Gu Z. Jin C. Wang G. Zou Y. Sakamoto M. Takaya Diamond Relat. Mater. 7 1998 765
8. O. Groening O.M. Kuettel E. Schaller P. Groening L. Schlapbach Appl. Phys. Lett. 69 1996 476
9. J. van der Weide Z. Zhang P.K. Baumann M.G. Wensell J. Bernholc R.J. Nemanich Phys. Rev. B 50 1994 5803
10. N.K. Annamalai, U.S. Patent No. 5,186,785, Feb. 16, 1993.