Influence of thickness on field emission characteristics of AlN thin films

Applied Surface Science

Volumn 243, Issue 1-4, 2005, Pages 394-400

  Wang, Y X ^a,b   Li, Y A ^a   Feng, W ^a   Li, W Q ^a   Zhao, C H ^a   Liu, L H ^a   Feng, K C ^b   Zhao, Y N ^a  

^a JILIN UNIVERSITY   (China)

^b CHANGCHUN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Aluminum nitride; Current emission; Field emission; Thin films; Turn on electric field

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELDS; ELECTRONS; PHYSICAL VAPOR DEPOSITION; SILICON WAFERS; SPUTTERING; THICKNESS MEASUREMENT; VACUUM;

CURRENT EMISSIONS; FIELD EMISSIONS; MELTING POINT; TURN-ON ELECTRIC FIELD;

THIN FILMS;

EID: 14544285050     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.111     Document Type: Article

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