Field emission mechanism from nanocrystalline cubic boron nitride films

Microelectronics Journal

Volumn 35, Issue 4, 2004, Pages 371-374

  Wang, B ^a   Wang, R Z ^a   Zhou, H ^a   Yan, X H ^a,b   Cao, J X ^b   Wang, H ^a   Yan, H ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

^b XIANGTAN UNIVERSITY   (China)

Author keywords

Cubic boron nitride; Field emission

Indexed keywords

CUBIC BORON NITRIDE; ELECTRIC CHARGE; ELECTRODES; ELECTRON EMISSION; GRAIN SIZE AND SHAPE; KINETIC ENERGY; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; PERMITTIVITY; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR MATERIALS; THRESHOLD VOLTAGE;

BAND GAPS; BANDGAP BROADENING; BARRIER HEIGHT;

THIN FILMS;

EID: 1442357972     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00248-9     Document Type: Conference Paper

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