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Volumn 81, Issue 15, 2002, Pages 2782-2784
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Band bending mechanism for field emission in wide-band gap semiconductors
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Author keywords
[No Author keywords available]
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Indexed keywords
BANDBENDING;
CONDUCTION-BAND MINIMUM;
CUBIC BORON NITRIDE (CBN);
EMISSION PERFORMANCE;
ENERGY DISTRIBUTIONS;
LINEARLY PROPORTIONAL;
MAXIMUM VALUES;
NEGATIVE ELECTRON AFFINITY;
THEORETICAL MODELS;
WIDE-BAND-GAP SEMICONDUCTOR;
BORON;
ELECTRON AFFINITY;
ENERGY GAP;
FIELD EMISSION;
CUBIC BORON NITRIDE;
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EID: 79955997401
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.1511809 Document Type: Article |
Times cited : (58)
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References (12)
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