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Materials Transactions

Volumn 48, Issue 8, 2007, Pages 2202-2206

Formation of silicon nanowires by CVD using gold catalysts at low temperatures

(4) Suzuki, Hiroshi a Araki, Hiroshi a Tosa, Masahiro a Noda, Tetsuji a

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

Chemical vapor deposition processes; Disilane; Nanowire; Silicon; Wiring

Indexed keywords

CATALYST ACTIVITY; CHEMICAL VAPOR DEPOSITION; CRYSTAL ORIENTATION; EUTECTICS; FLOW RATE; SILICON; SINGLE CRYSTALS; SYNTHESIS (CHEMICAL);

DISILANE; DISILANE FLOW RATE; GOLD SQUARE DOTS;

NANOWIRES;

EID: 34648831380 PISSN: 13459678 EISSN: None Source Type: Journal
DOI: 10.2320/matertrans.MRA2007059 Document Type: Article

Times cited : (28)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.