In situ growth of isotopically enriched 28Si nanowires using the floating-zone (FZ) melting method

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 1 A/B, 2002, Pages

  Hu, Quanli ^a,b   Li, Guoqing ^a,b   Suzuki, Hiroshi ^a,b   Araki, Hiroshi ^a,b   Noda, Tetsuji ^a,b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

Floating zone melting; Isotopically enriched silicon; Nanowires

Indexed keywords

CRYSTALLINE MATERIALS; ENERGY DISPERSIVE SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON; TRANSMISSION ELECTRON MICROSCOPY;

FLOATING-ZONE (FZ) MELTING METHOD;

NANOSTRUCTURED MATERIALS;

EID: 0037082082     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l7     Document Type: Article

References (10)