Stress engineering in Cu/Low-k interconnects by using UV-Cure of Cu diffusion barrier dielectrics

2006 International Interconnect Technology Conference, IITC

Volumn , Issue , 2006, Pages 95-97

  Goto, Kinya ^a   Kodama, Daisuke ^a   Suzumura, Naohito ^a   Hashii, Shinobu ^b   Matsumoto, Masahiro ^a   Miura, Noriko ^a   Furusawa, Takeshi ^a   Matsuura, Masazumi ^a   Asai, Koyu ^a  

^a RENESAS TECHNOLOGY CORP   (Japan)

^b Renesas Semiconductor Engineering Corporation   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER; CURING; DIELECTRIC MATERIALS; DRYING; INTERDIFFUSION (SOLIDS); RELIABILITY; SULFATE MINERALS; TECHNOLOGY;

BARRIER DIELECTRICS; CU DIFFUSION; FILM CHARACTERISTICS; INTERCONNECT RELIABILITY; INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE; STRESS CHANGES; STRESS ENGINEERING;

MOLECULAR BEAM EPITAXY;

EID: 50249113293     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.2006.1648656     Document Type: Conference Paper

References (5)

1. T.Furusawa, et al, Proceedings of IITC2005, pp 45-47.
2. K.Yoneda, et al, Proceedings of IITC2005, pp 220-222.
3. F.Ito, et al, Proceedings of AMC2005, pp 32-33.
4. K.Goto, et al, Proceedings of AMC 2005, pp 30-31.
5. K.Ishikawa, et al, Proceedings of IITC2005, pp 39-41.