Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 8, 2003, Pages 5246-5250

  Chiang, Chiu Chih ^a   Chen, Mao Chieh ^a   Ko, Chung Chi ^b   Jang, Syun Ming ^b   Yu, Chen Hua ^b   Liang, Mong Song ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Dielectric barrier; Dielectric breakdown; Hydrogen bridge; Si H weak bond; SiCN:H

Indexed keywords

ELECTRIC BREAKDOWN; PERMITTIVITY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; THERMAL EFFECTS;

HYDROGEN BRIDGE;

SEMICONDUCTING FILMS;

EID: 0142012118     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.5246     Document Type: Article

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