-
1
-
-
29144490505
-
Development of ULSI interconnect integration technology--Copper interconnect with low k dielectrics [J]
-
(in Chinese)
-
WANG Y., and KANG J. Development of ULSI interconnect integration technology--Copper interconnect with low k dielectrics [J]. Chinese Journal of Semiconductors 23 11 (2002) 1121-1134 (in Chinese)
-
(2002)
Chinese Journal of Semiconductors
, vol.23
, Issue.11
, pp. 1121-1134
-
-
WANG, Y.1
KANG, J.2
-
2
-
-
31644437457
-
Effect of nitrogen content on the degradation mechanisms of thin Ta-Si-N diffusion barriers for Cu metalhzation [J]
-
HÜBNER R., HECKER M., MATTERN N., HOFFMANN V., WETZIG K., HEUER H., WENZEL C., ENGELMANN H., GEHRE D., and ZSCHECH E. Effect of nitrogen content on the degradation mechanisms of thin Ta-Si-N diffusion barriers for Cu metalhzation [J]. Thin Solid Films 500 1/2 (2006) 259-268
-
(2006)
Thin Solid Films
, vol.500
, Issue.1-2
, pp. 259-268
-
-
HÜBNER, R.1
HECKER, M.2
MATTERN, N.3
HOFFMANN, V.4
WETZIG, K.5
HEUER, H.6
WENZEL, C.7
ENGELMANN, H.8
GEHRE, D.9
ZSCHECH, E.10
-
4
-
-
0031250083
-
Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films [J]
-
STAVREV M., FISCHER D., WENZEL C., DRESCHER K., and MATTERN N. Crystallographic and morphological characterization of reactively sputtered Ta, Ta-N and Ta-N-O thin films [J]. Thin Solid Films 307 1/2 (1997) 79-88
-
(1997)
Thin Solid Films
, vol.307
, Issue.1-2
, pp. 79-88
-
-
STAVREV, M.1
FISCHER, D.2
WENZEL, C.3
DRESCHER, K.4
MATTERN, N.5
-
6
-
-
0036132951
-
Tantalum carbide and nitride diffusion barriers for Cu metallization [J]
-
LAURILA T., ZENG K., KIVILAHTI J., MOLARIUS J., RIEKKINEN T., and SUNI I. Tantalum carbide and nitride diffusion barriers for Cu metallization [J]. Microelectronic Engineering 60 1/2 (2002) 71-80
-
(2002)
Microelectronic Engineering
, vol.60
, Issue.1-2
, pp. 71-80
-
-
LAURILA, T.1
ZENG, K.2
KIVILAHTI, J.3
MOLARIUS, J.4
RIEKKINEN, T.5
SUNI, I.6
-
7
-
-
34548764868
-
Technology study of AZO thin films made by magnetron sputtering [J]
-
ZHANG L., LU J., DUAN Q., WANG H., LI R., XIN R., WANG H., and ZHANG Y. Technology study of AZO thin films made by magnetron sputtering [J]. Electronic Components and Materials 24 8 (2005) 46-48
-
(2005)
Electronic Components and Materials
, vol.24
, Issue.8
, pp. 46-48
-
-
ZHANG, L.1
LU, J.2
DUAN, Q.3
WANG, H.4
LI, R.5
XIN, R.6
WANG, H.7
ZHANG, Y.8
-
8
-
-
0000786416
-
Ternary amorphous metallic thin films as diffusion barriers for Cu metallization [J]
-
NICOLET M. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization [J]. Applied Surface Science 91 (1995) 269-276
-
(1995)
Applied Surface Science
, vol.91
, pp. 269-276
-
-
NICOLET, M.1
-
9
-
-
0348209108
-
The effect of nitrogen partial pressure on Zr-Si-N diffusion barrier [J]
-
SONG Z., XU K., and CHEN H. The effect of nitrogen partial pressure on Zr-Si-N diffusion barrier [J]. Microelectronic Engineering 71 1 (2004) 28-33
-
(2004)
Microelectronic Engineering
, vol.71
, Issue.1
, pp. 28-33
-
-
SONG, Z.1
XU, K.2
CHEN, H.3
-
11
-
-
0000786416
-
Ternary amorphous metallic thin films as diffusion barriers for Cu metallization [J]
-
NICOLET M. Ternary amorphous metallic thin films as diffusion barriers for Cu metallization [J]. Applied Surface Science 91 1/4 (1995) 269-276
-
(1995)
Applied Surface Science
, vol.91
, Issue.1-4
, pp. 269-276
-
-
NICOLET, M.1
-
12
-
-
0032482038
-
Improved TiN film as a diffusion barrier between copper and silicon [J]
-
RHA S., LEE W., LEE S., HWANG Y., LEE Y., KIM D., KIM D., CHUN S., and PARK C. Improved TiN film as a diffusion barrier between copper and silicon [J]. Thin Solid Films 320 (1998) 134-140
-
(1998)
Thin Solid Films
, vol.320
, pp. 134-140
-
-
RHA, S.1
LEE, W.2
LEE, S.3
HWANG, Y.4
LEE, Y.5
KIM, D.6
KIM, D.7
CHUN, S.8
PARK, C.9
-
13
-
-
0037166524
-
Microstructural and electrical characteristics of reactively sputtered Ta-N thin films [J]
-
CHANG C., JENG J., and CHEN J. Microstructural and electrical characteristics of reactively sputtered Ta-N thin films [J]. Thin Solid Films 413 (2002) 46-51
-
(2002)
Thin Solid Films
, vol.413
, pp. 46-51
-
-
CHANG, C.1
JENG, J.2
CHEN, J.3
-
14
-
-
2942585297
-
Microstructure of amorphous tantalum nitride thin films [J]
-
TSUKIMOTO S., MORIYAMA M., and MURAKAMI M. Microstructure of amorphous tantalum nitride thin films [J]. Thin Solid Films 460 (2004) 222-226
-
(2004)
Thin Solid Films
, vol.460
, pp. 222-226
-
-
TSUKIMOTO, S.1
MORIYAMA, M.2
MURAKAMI, M.3
-
15
-
-
0037881914
-
Diffusion barrier properties of sputtered TaN, between Cu and Si using TaN as the target [J]
-
KUO Y., HUANG J., LIN S., LEE C., and LEE W. Diffusion barrier properties of sputtered TaN, between Cu and Si using TaN as the target [J]. Materials Chemistry and Physics 80 3 (2003) 690-695
-
(2003)
Materials Chemistry and Physics
, vol.80
, Issue.3
, pp. 690-695
-
-
KUO, Y.1
HUANG, J.2
LIN, S.3
LEE, C.4
LEE, W.5
-
16
-
-
0030235253
-
r diffusion barriers between Si and Cu [J]
-
r diffusion barriers between Si and Cu [J]. Thin Solid Films 286 (1996) 170-175
-
(1996)
Thin Solid Films
, vol.286
, pp. 170-175
-
-
UEKUBO, M.1
OKU, T.2
NII, K.3
MURAKAMI, M.4
TAKAHIRO, K.5
YAMAGUCHI, S.6
NAKANO, T.7
OHTA, T.8
|