Tantalum carbide and nitride diffusion barriers for Cu metallisation

Microelectronic Engineering

Volumn 60, Issue 1-2, 2002, Pages 71-80

  Laurila, T ^a   Zeng, K ^a   Kivilahti, J K ^a   Molarius, J ^b   Riekkinen, T ^b   Suni, I ^b  

^a Laboratory of Space Technology   (Finland)

^b VTT TECHNICAL RESEARCH CENTRE OF FINLAND   (Finland)

Author keywords

Copper metallisation, tantalum carbide; Diffusion barriers; Phase diagrams; Tantalum nitride

Indexed keywords

COPPER; DIFFUSION; HIGH TEMPERATURE EFFECTS; INTERFACES (MATERIALS); PHASE DIAGRAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; TANTALUM CARBIDE; TERNARY SYSTEMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

DIFFUSION BARRIERS;

METALLIZING;

EID: 0036132951     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00582-2     Document Type: Conference Paper

References (13)

1. Electrical properties and recombination activity of copper, nickel and cobolt in silicon
2. Advanced materials for future interconnections of the future need and strategy
3. Formation of Copper Silicides from Cu(100)/Si(100) and Cu(111)/Si(111) structures
4. Failure mechanism of Ta diffusion barrier between Cu and Si
5. An assessment of the Fe-C-Si system
6. Gibbs energy coupling of the phase diagram and thermochemistry in the Tantalum-Carbon system
7. A thermodynamic evulation of the Fe-Cu-C-N system
8. Thermodynamic calculation of the Si-N-O system
9. Analysis of the phase diagram and thermochemistry in the Ta-N and the Ta-C-N systems
10. 2N and TaN diffusion barriers for Copper metallization
11. Reliability of Tantalum based diffusion barriers between Copper and Silicon