Diffusion barrier properties of sputtered TaNx between Cu and Si using TaN as the target

Materials Chemistry and Physics

Volumn 80, Issue 3, 2003, Pages 690-695

  Kuo, Yu Lin ^a   Huang, Jui Jen ^a   Lin, Shun Tang ^a   Lee, Chiapyng ^a   Lee, Wen Horng ^b  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^b LEE MING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Bias; Diffusion barrier; Sputtering; Tantalum nitride

Indexed keywords

ANNEALING; COPPER; DIFFUSION; INTERFACES (MATERIALS); SCANNING ELECTRON MICROSCOPY; SPUTTER DEPOSITION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

SHEET RESISTANCE;

TANTALUM COMPOUNDS;

EID: 0037881914     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0254-0584(03)00106-8     Document Type: Article

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